Mutlugün, Evren
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Evren Mutlugün
Mutluguen, Evren
Mutlugun, E.
Mutlugun, Evren
Mutlugün, Evren
Mutluguen, Evren
Mutlugun, E.
Mutlugun, Evren
Mutlugün, Evren
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Prof. Dr.
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evren.mutlugun@agu.edu.tr
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02.05. Elektrik & Elektronik Mühendisliği
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6
CLEAN WATER AND SANITATION
1
Research Products
7
AFFORDABLE AND CLEAN ENERGY
5
Research Products
9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
3
Research Products
14
LIFE BELOW WATER
1
Research Products
Documents
118
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3220
h-index
32
Documents
111
Citations
3013
Scholarly Output
58
Articles
43
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2700/1121
Supervised MSc Theses
4
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2
WoS Citation Count
793
Scopus Citation Count
971
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14
Scopus h-index
15
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0
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4
WoS Citations per Publication
13.67
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16.74
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27
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| Journal | Count |
|---|---|
| ACS Applied Nano Materials | 4 |
| Advanced Optical Materials | 3 |
| Optics Express | 2 |
| Journal of Physics D-Applied Physics | 2 |
| Journal of Physical Chemistry C | 2 |
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Now showing 1 - 10 of 58
Article Citation - WoS: 1Citation - Scopus: 1Tailoring Quantum Dot Shell Thickness and Polyethylenimine Interlayers for Optimization of Inverted Quantum Dot Light-Emitting Diodes(MDPI, 2024) Yazici, Ahmet F.; Ocal, Sema Karabel; Bicer, Aysenur; Serin, Ramis B.; Kacar, Rifat; Ucar, Esin; Mutlugun, EvrenQuantum dot light-emitting diodes (QLEDs) hold great promise for next-generation display applications owing to their exceptional optical properties and versatile tunability. In this study, we investigate the effects of quantum dot (QD) shell thickness, polyethylenimine (PEI) concentration, and PEI layer position on the performance of inverted QLED devices. Two types of alloyed-core/shell QDs with varying shell thicknesses were synthesized using a one-pot method with mean particle sizes of 8.0 +/- 0.9 nm and 10.3 +/- 1.3 nm for thin- and thick-shelled QDs, respectively. Thick-shelled QDs exhibited a higher photoluminescence quantum yield (PLQY) and a narrower emission linewidth compared to their thin-shelled counterparts. Next, QLEDs employing these QDs were fabricated. The incorporation of PEI layers on either side of the QD emissive layer significantly enhanced device performance. Using PEI on the hole transport side resulted in greater improvement than on the electron injection side. Sandwiching the QD layer between two PEI layers led to the best performance, with a maximum external quantum efficiency (EQE) of 17% and a peak luminance of 91,174 cd/m2 achieved using an optimized PEI concentration of 0.025 wt% on both electron injection and hole injection sides. This study highlights the critical role of QD shell engineering and interfacial modification in achieving high-performance QLEDs for display applications.Article Colloidal Photodetectors Based on Engineered Multishelled InP Based Quantum Dots(IOP Publishing Ltd, 2026) Akrema; Erol, Erdinc; Savas, Muzeyyen; Yazici, Ahmet Faruk; Erdem, Talha; Mutlugun, EvrenIn this work, we present a straightforward and cost-effective approach to synthesize multi-shell InP/ZnSe/ZnSeS/ZnS quantum dots (QDs) that show promising potential for use in photodetectors. By carefully layering ZnSe, ZnSeS, and ZnS shells around an InP core, we were able to enhance the stability and optical performance of the QDs, achieving a narrow emission peak of 45 nm and a high photoluminescence quantum yield of 55%. These QDs were then integrated into simple photodetector devices, which possessed impressive sensitivity and detection capabilities. Specifically, our devices achieved a peak responsivity of 0.54 A W-1 and a detectivity of 2.22 x 1011 Jones at 400 nm with a 5 V bias. This study highlights the potential of InP-based QDs as a safer and more sustainable alternative to traditional QDs that contain toxic heavy metals, offering a viable path forward for developing high-performance optoelectronic devices. Our findings suggest that these InP/ZnSe/ZnSeS/ZnS QDs could be a key material for the next generation of high-performance optoelectronic devices, especially in applications that require highly sensitive and stable photodetectors.Article Citation - WoS: 12Citation - Scopus: 11Long-Time Stable Colloidal Zn-Ag Quantum Dots With Tunable Midgap-Involved Emission(AIP Publishing, 2021) Sabzevari, Zahra; Sahraei, Reza; Jawhar, Nawzad Nadhim; Yazici, Ahmet Faruk; Mutlugun, Evren; Soheyli, EhsanQuaternary Zn-Ag-In-S (ZAIS) quantum dots (QDs) with efficient, tunable, and stable photoluminescence (PL) emission were prepared via a simple, effective, and low-cost reflux method. The structural analysis revealed the dominance of the quantum confinement effect. The calculated PL emission quantum yield was enhanced from 8.2% to 28.7% with experimental parameters indicating their marked influence on the PL emission properties of the final product. Particularly, it was found that by varying the precursors' feeding ratio, tunable emission from green to red was achieved. A set of direct and indirect pieces of evidence such as the broad-band emission spectrum (FWHM>100nm), large Stokes shift more than 120nm, and predominantly a biexponentially long-lived decay profile with an average lifetime of about 366ns were observed, showing the contribution of midgap localized energy levels in the recombination process. These data were obtained independently on the experimental condition used, which confirmed that this is mostly an intrinsic electronic property of quaternary In-based QDs. Finally, to ensure the stability of QDs in terms of colloidal and optical emission, their emission ability was evaluated after 26 months of storage. Colloidal QDs were still luminescent with strong yellowish-orange color with emission efficiency of similar to 20.3% after 26 months. The combination of synthesis simplicity, compositional non-toxicity, PL emission superiority (strong, tunable, stable, and long lifetime emission), and colloidal stabilities confirms that the present ZAIS QDs are promising candidates for a wide range of applications in biomedicine, anticounterfeiting, and optoelectronics.Article Citation - WoS: 14Citation - Scopus: 13The Effect of Ligand Chain Length on the Optical Properties of Alloyed Core-Shell InPZnS/ZnS Quantum Dots(Elsevier Science SA, 2017) Altintas, Yemliha; Talpur, Mohammad Younis; Mutlugun, EvrenIn this work, we demonstrate the effect of organic ligands on the optical properties of alloyed core-shell InPZnS/ZnS quantum dots (QDs). We have systematically studied the synthesis and characterization of InPZnS/ZnS QDs using short and long chain length ligands i.e., butyric (C4), hexanoic (C6), octanoic (C8), dodecanoic (C12), myristic (C14), palmitic (C16) and stearic acids (C18), respectively. This study achieved more than 85% quantum yield with 43 nm full-width-half maximum value, using dodecanoic acid as the capping ligand. The properties of the QDs with short and long chain length ligands have been analyzed using UV Vis absorption spectrophotometer, steady state and time resolved photoluminescence spectrometer, X-ray diffraction, Zeta sizer, transmission electron microscopy and energy dispersive X-ray spectroscopy. (C) 2017 Published by Elsevier B.V.Research Project Esnek kuantum noktacık tabanlı platformlarda üretilen yenilikçi organik ışık saçan diyotlar(TUBİTAK, 2018) Mutlugün, EvrenIşık saçan organik diyotlarda renk saflığı ve dalga boyunun ayarlanabilmesini_x000D_ sağlamak için kuantum noktacıkları kullanmak büyük önem arz etmektedir. Yarı_x000D_ iletken koloidal kuantum noktacıklar biyo-teknolojiden opto-elektroniğe uzanan geniş_x000D_ bir yelpazede ışık hasadı uygulamaları için oldukça önemli malzemelerdir. Birkaç_x000D_ nanometreden onlarca nanometreye uzanan fiziksel boyutları, kuantum noktacıkların_x000D_ kuantum mekaniksel özelliklerini ön plana çıkarır. Boyutlarının değiştirilmesiyle optik_x000D_ ışıma ve soğurma tayflarının değişimi, dar ışıma tayfları, yüksek kuantum_x000D_ verimlilikleri ve uzun süreli ışıma kararlılıkları kuantum noktacıkları diğer ışık saçan_x000D_ organik boya ve floroforlardan üstün hale getirmektedir._x000D_ Bu proje kapsamında yüksek verimli, Cd içermeyen, InP-tabanlı InP/ZnS_x000D_ kuantum noktacık yarıiletken malzemeleri sentezlendi. Geliştirdiğimiz sentez reçetesi_x000D_ sayesinde kuantum verimlilik değerlerini yeşil ışık yayan kuantum noktacıklarda_x000D_ %90’lara yükseltmeyi ve renk saflığının göstergesi olan FWHM değerini ise 44 nm’ye_x000D_ kadar düşürmeyi başardık. Sentezlenen kuantum noktacıklar polimer içerisine_x000D_ gömülerek polimerik filmler hazırlandı ve bu polimerik filmler içerisindeki donor ve_x000D_ acceptor kuantum noktacıklar arasındaki enerji transferi araştırıldı. Ayrıca Cd_x000D_ içermeyen bu yarıiletken nanokristaller mavi LED üzerinde renk dönüşüm ajanları_x000D_ olarak kullanılarak beyaz ışığın tüm parametreleri araştırıldı ve kullanılan yöntem ile_x000D_ teorik hesaplamalar sayesinde kaliteli beyaz ışık üretimi gerçekleştirildi. Yüksek_x000D_ miktardaki renk saflığından dolayı Cd-tabanlı CdSe/ZnS kuantum noktacıkları da_x000D_ beyaz ışık üretiminde kullanılmak üzere sentezlendi. %98 kuantum verimliliğine ve_x000D_ 27 nm FWHM değerine ulaşıldı. Gerek CdSe temelli, gerekse InP temelli malzemeler_x000D_ için gerçekleştirilen bu çalışmalarda bu malzemeler için dünyadaki en yüksek kalite_x000D_ değerlerine ulaşılmıştır. Sentezlenen numuneler ile kendi başına durabilen esnek_x000D_ polimerik filmler üretildi ve yüksek saflıkta ışık yayan kuantum noktacıklar içeren_x000D_ polimerik filmler sayesinde yüksek kalitede beyaz ışık elde edildi._x000D_ Son olarak, üniversitemize OLED üretim sistemi alt yapısının kurulmasını_x000D_ takiben farklı mimarilere sahip OLED cihazları üretildi. Ayrıca son yıllarda kuantum_x000D_ noktacık içeren OLED cihazlarındaki gelişmeler ışığında laboratuvar ortamında_x000D_ sentezlediğimiz kuantum noktacıkları OLED mimarisi içerisinde verimli bir şekilde_x000D_ kullanmayı ve esnek özellikteki OLED cihazını aktif bir şekilde çalıştırmayı başardık._x000D_ Üretilen cihazların karakterizasyonu sonucunda kuantum noktacık içeren OLED_x000D_ cihazının daha verimli ve kararlı olduğu anlaşıldı. Bu doğrultuda üniversitemiz_x000D_ laboratuvarında üretilen en verimli OLED cihazının üzerine projede açıklandığı_x000D_ şekliyle kendi başına durabilen esnek filmler konularak kaliteli beyaz ışık elde edildi._x000D_ Dünyada ilk kez bu yaklaşımla üretilen yüksek kalitedeki beyaz ışığın ve sunulan bu_x000D_ yaklaşımın yeni teknolojilerle birlikte aktif bir şekilde kullanılacağını düşünmekteyiz.Article Citation - WoS: 59Citation - Scopus: 63Electroluminescence Efficiency Enhancement in Quantum Dot Light-Emitting Diodes by Embedding a Silver Nanoisland Layer(Wiley-VCH Verlag GmbH, 2015) Yang, Xuyong; Hernandez-Martinez, Pedro Ludwig; Dang, Cuong; Mutlugun, Evren; Zhang, Kang; Demir, Hilmi Volkan; Sun, Xiao WeiA colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency (EQE) of 7.1% achieved in the present work is the highest efficiency value reported for green-emitting QLEDs with a similar structure, which corresponds to 46% enhancement compared with the reference device. The relevant mechanisms enabling the EQE enhancement are associated with the near-field enhancement via an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Ag nanoislands, which are found to lead to good agreement between the simulation results and the experimental data, providing us with a useful insight important for plasmonic QLEDs.Conference Object Simple, Sustainable Fabrication of Fully Solution-Processed, Transparent, Metal-Semiconductor Photodetectors Using a Surgical Blade as an Alternative to Conventional Tools(SPIE - The International Society for Optics and Photonics, 2022) Savas, Muzeyyen; Yazici, Ahmet Faruk; Arslan, Aysenur; Mutlugun, Evren; Erdem, TalhaFabrication of optoelectronic devices relies on the expensive, energy-consuming conventional tools such as chemical vapor deposition, lithography, and metal evaporation. Furthermore, the films used in these devices are usually deposited at elevated temperatures and under vacuum that impose further restrictions to the device fabrication. Developing an alternative technology would contribute to the efforts on achieving a more sustainable optoelectronics technology. Keeping this focus in our focus, here we present a simple technique to fabricate visible photodetectors. These fully solution-processed and transparent metal-semiconductor-metal photodetectors employ silver nanowires (Ag NW) as the transparent electrodes replacing the indium-tin oxide (ITO) commonly used in optoelectronic devices. By repeatedly spin coating Ag NWs on a glass substrate followed by the coating of ZnO nanoparticles, we obtained a highly conductive transparent electrode reaching a sheet resistance of 95 Omega/square as measured by the four-probe method. Optical spectroscopy revealed that the transmittance of the Ag NW-ZnO films was 84% at 450 nm while transmittance of the ITO films was 90% at same wavelength. Following the formation of the conductive film, we scratched it using a heated surgical blade to open a gap. The scanning electron microscope images indicate that a gap of similar to 30 mm is opened forming an insulating line. As the active layer, we drop-casted red-emitting CdSe/ZnS core-shell quantum dots (QDs) on to this gap to form a metal-semiconductor-metal photodetector. These visible QD- based photodetectors exhibited responsivities and detectivities up to 8.5 mA/W and 0.95x10(9) Jones, respectively. These proof-of-concept photodetectors show that the environmentally friendly, low- cost, and energy-saving technique presented here can be an alternative to conventional, more expensive, and energy-hungry techniques while fabricating light-harvesting devices.Master Thesis Yüksek Parlaklık Kuantum Nokta Led Aygıtların Geliştirilmesi(Abdullah Gül Üniversitesi / Fen Bilimleri Enstitüsü, 2023) Biçer, Ayşenur; Mutlugün, EvrenOptoelectronic devices are essential components of optical communication systems, internet and displays. Among these devices, in the category of light emitting diodes (LED), there are quantum dot LEDs (QLED) that emit light by employing quantum dots (QDs) and have rich optoelectronic properties such as varying emission wavelength associated with the its size and excellent brightness [1], [2]. In this thesis, we worked on transparent and solution processible QLEDs in three groups: Indium Phosphide (InP) QLEDs, Carbon Quantum Dot (CQD) LEDs and Cadmium Selenide (CdSe) QLEDs. In the InP study, a QLED was fabricated using InP-based QDs as the emitting layer to demonstrate the feasibility of these QDs. Results found a maximum external quantum efficiency (EQE) of 1.16% and brightness of 1039 cd/m2. For the CQD LEDs, yellow emissive QDs were mixed systematically in Poly(9-vinylcarbazole) (PVK) as the host. A blue-to-white shift was observed in the CIE coordinate with varying ratios. From these, white luminescent devices were obtained with a maximum brightness of 774.3 cd/m2 and an EQE of 0.76%. High-brightness irradiation was obtained compared to other white-luminescent studies in the literature. In CdSe QLEDs, as a proof of concept, devices with a maximum brightness of 111,450 cd/m2 and an EQE of 15.08% were obtained. In these three works, devices with high brightness in their own categories were produced using both heavy metal and non-heavy metal QDs. Keywords: Optoelectronics, LED, QD, CQD LED, InP QLED, CdSe QLEDArticle Fully Inorganic Colloidal CsPbBr3 Perovskite Nanocrystals with Zn-Doping and Metal Oxide Encapsulation for Luminescent Display Panels(Amer Chemical Soc, 2025) Khorasani, Azam; Soheyli, Ehsan; Mutlugun, EvrenPerovskite nanocrystals (PeNCs) are emerging as exceptional materials due to their high photoluminescence quantum yield, tunable bandgap, and excellent charge carrier mobility, enabling a wide range of colors and promising applications in optoelectronics and photovoltaics. Despite their advantages, PeNCs face stability challenges caused by environmental factors. In the presented study, a facile and versatile colloidal hot-injection method was used to apply the beneficial aspects of Zn-doping in cesium lead bromide (CsPbBr3) PeNCs. The uniform platelet-shaped Zn-doped CsPbBr3 PeNCs were prepared by doping with a 0.1 molar ratio of zinc-oleate solution in the perovskite precursors during synthesis. Then, zinc-oxide (ZnO) and nickel-oxide (NiO) coating layers were utilized separately to effectively reduce surface defects, encapsulate PeNCs, and improve their stability issues. To fabricate the coated PeNCs with metal oxides, zinc acetate and nickel(II) acetate tetrahydrate solutions were prepared individually and added to the crude perovskite solutions. The quantum yield of Zn-doped CsPbBr3 (CsPb1-xZnxBr3) PeNCs coated with ZnO increased from 50% for bare CsPbBr3 to over 84%, while NiO-coated PeNCs exhibited a higher yield of 90% both of which remarkably enhanced the emission stability. Moreover, NiO coatings represented a proper protection against surface imperfections and improved resistance to external stimuli. The combination of facile/effective preparation method, excellent emission efficiency, and reliable emission stability nominates the prepared colloidal composite for display pixels, detectors, and lasers.Article Citation - WoS: 2Citation - Scopus: 1Toward Sustainable Optoelectronics: Solution-Processed Quantum Dot Photodetector Fabrication Using a Surgical Blade(SPIE - Society of Photo-Optical Instrumentation Engineers, 2023) Savas, Muzeyyen; Yazici, Ahmet Faruk; Arslan, Aysenur; Mutluguen, Evren; Erdem, TalhaFabrication of optoelectronic devices relies on expensive, energy-consuming conventional tools including chemical vapor deposition, lithography, and metal evaporation. Furthermore, the films used in these devices are usually deposited at elevated temperatures (> 300 degrees C) and under high vacuum, which necessitate further restrictions on the device fabrication. Developing an alternative technology would contribute to the efforts on achieving a sustainable optoelectronics technology. Keeping this in our focus, here we present a simple technique to fabricate visible photodetectors (PDs). These fully solution-processed and transparent metal-semiconductor-metal (MSM) PDs employ silver nanowires (Ag NW) as the transparent electrodes replacing the indium-tin-oxide (ITO) commonly used in optoelectronic devices. By repeatedly spin coating Ag NWs on a glass substrate followed by the coating of zinc oxide nanoparticles, we obtained a highly conductive transparent electrode reaching a sheet resistance of 95 omega/? as measured by the four-probe method. Optical spectroscopy revealed that the transmittance of the Ag NW-ZnO films was 84% at 450 nm while the transmittance of the ITO films was 90% at the same wavelength. Following the formation of the conductive film, we scratched it using a heated surgical blade to open a gap. The scanning electron microscope images indicate that a gap of similar to 30 mu m is opened forming an insulating line. As the active layer, we drop-casted red-emitting CdSe/ZnS core-shell quantum dots (QDs) onto this gap to form a MSM PD. These visible QD-based PDs exhibited responsivities and detectivities up to 8.5 mA/W and 0.95 x 109 Jones, respectively at a bias voltage of 5 V and wavelength of 650 nm. These proof-of-concept PDs show that the environmentally friendly, low-cost, and energy-saving technique presented here can be an alternative to conventional, high-cost, and energy-hungry techniques while fabricating photoconductive devices.
