Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
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Article Citation - WoS: 8Citation - Scopus: 9Microstructural Modulation of Organic Passivation Layers for Metal Oxide Semiconductors to Achieve High Bias Stability(Royal Soc Chemistry, 2020) Ho, Dongil; Jeong, Ha-Yun; Minh Nhut Le; Usta, Hakan; Kwon, Hyuck-In; Kim, Myung-Gil; Kim, Choongik; Le, Minh NhutElectrical properties of metal oxide thin-film transistors (TFTs) are tunedviathe microstructural control of organic back-channel passivation layers. In this study, organic semiconductor (OSC) passivation layers with various molecular and physicochemical properties are employed to identify the back-channel passivation mechanism in solution-processed amorphous indium gallium zinc oxide (a-IGZO) TFTs. The OSC microstructure influences the passivation of electrical defects ina-IGZO TFTs by compensating for acceptor-like trap states and dangling bonds in the back-channel. First, the distance between an n-type OSC (C-60) and thea-IGZO back-channel is controlled by employing phosphonic acid molecules with different carbon chain lengths. Positive bias stress stability is tuned by applying both the OSC and carbon chain effect, leading to stable, high-performance TFTs with the determination of subgap density of states to confirm the compensation effects on the total acceptor-like defect states. The n-doping of identical passivation layers is further investigated by using perylenedicarboximide derivatives to confirm the proposed n-doping mechanism. Finally, the semiconductor 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene is selected on the basis of our proposed passivation model and exhibited good passivation characteristics. This study demonstrates an ideal molecular design for organic passivation layers, which shows significant potential for the realization of stable, high-performance TFTs.Article Citation - WoS: 39Citation - Scopus: 40A New Rod-Shaped Bodipy-Acetylene Molecule for Solution-Processed Semiconducting Microribbons in N-Channel Organic Field-Effect Transistors(Royal Soc Chemistry, 2017) Ozdemir, Mehmet; Choi, Donghee; Zorlu, Yunus; Cosut, Bunyemin; Kim, Hyungsug; Kim, Choongik; Usta, HakanBODIPY-based pi-conjugated small molecules have been extensively studied in various fields of sensing and biochemical labelling; however, their use in organic optoelectronic applications is very limited. A new solution-processable acceptor-donor-acceptor (A-D-A) type small molecule, BDY-PhAc-BDY, consisting of BODIPY pi-acceptors and a rod-shaped 1,4-bis-(thienylethynyl) 2,5-dialkoxybenzene pi-donor, has been synthesized and fully characterized as a novel n-channel semiconductor in bottom-gate/top-contact organic field-effect transistors (OFETs). The new semiconductor exhibits an electrochemical band gap of 2.12 eV with highly stabilized HOMO/LUMO energy levels of -5.68 eV/-3.56 eV. Single-crystal X-ray diffraction (XRD) analysis of BDY-PhAc-BDY reveals a relatively low "BODIPY-meso-thiophene" dihedral angle (theta = 44.94 degrees), antiparallel pi-stacked BODIPY dimers with an interplanar distance of 3.93 angstrom, and strong "C-H center dot center dot center dot pi (2.85 angstrom)" interactions. The OFET devices fabricated by solution processing show the formation of highly-crystalline, one-dimensional (1-D) microribbons, which results in clear n-channel semiconductivity with an electron mobility of 0.004 cm(2) V-1 s(-1) and an on/off current ratio of 10(5)-10(6). To date, this is the highest reported for BODIPY-based small molecular semiconductors with alkyne linkages. Our results clearly demonstrate that BODIPY is an effective pi-acceptor unit for the design of solution-processable, electron-transporting organic semiconductors and easily fabricable 1-D semiconductor micro-/nano-structures for fundamental/applied research in organic optoelectronics.