Design, synthesis, and characterization of alpha,omega-disubstituted indeno[1,2-b]fluorene-6,12-dione-thiophene molecular semiconductors. Enhancement of ambipolar charge transport through synthetic tailoring of alkyl substituents

dc.contributor.author Ozdemir, Mehmet
dc.contributor.author Choi, Donghee
dc.contributor.author Kwon, Guhyun
dc.contributor.author Zorlu, Yunus
dc.contributor.author Kim, Hyekyoung
dc.contributor.author Kim, Myung-Gil
dc.contributor.author Seo, SungYong
dc.contributor.author Sen, Unal
dc.contributor.author Citir, Murat
dc.contributor.author Kim, Choongik
dc.contributor.author Usta, Hakan
dc.contributor.authorID 0000-0002-0618-1979 en_US
dc.contributor.department AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü en_US
dc.contributor.institutionauthor Usta, Hakan
dc.contributor.institutionauthor Ozdemir, Mehmet
dc.contributor.institutionauthor Sen, Unal
dc.date.accessioned 2021-11-24T08:10:08Z
dc.date.available 2021-11-24T08:10:08Z
dc.date.issued 2016 en_US
dc.description H. U. acknowledges support from The Science Academy, Young Scientist Award (BAGEP) and Turkish Academy of Sciences, The Young Scientists Award Program (TUBA-GEBIP). H. U. acknowledges support from AGU-BAP (FOA-2015-24) and TUBITAK 113C021. C. K. acknowledges support from Basic Science Research Program through the National Research Foundation of Korea (NRF) (NRF-2014R1A1A1A05002158) and from the Center for Advanced So. Electronics under the Global Frontier Research Program of the Ministry of Science, ICT & Future Planning (Code No. 2013M3A6A5073175). en_US
dc.description.abstract A series of indeno[1,2-b]fluorene-6,12-dione-thiophene derivatives with hydrocarbon substituents at alpha,omega-positions as side groups have been designed and synthesized. The new compounds were fully characterized by H-1/C-13 NMR, mass spectrometry, cyclic voltammetry, UV-vis absorption spectroscopy, differential scanning calorimetry, thermogravimetric analysis, and melting point measurements. The solid state structure of the indeno[1,2-b]fluorene-6,12-dione acceptor core has been identified based on single-crystal X-ray diffraction (XRD). The structural and electronic properties were also studied using density functional theory calculations, which were found to be in excellent agreement with the experimental findings and provided further insight. The detailed effects of alkyl chain size and orientation on the optoelectronic properties, intermolecular cohesive forces, thin-film microstructures, and charge transport performance of the new semiconductors were investigated. Two of the new solution-processable semiconductors, 2EH-TIFDKT and 2OD-TIFDKT, were deposited as thin-films via solution-shearing, drop-casting, and droplet-pinned crystallization methods, and their morphologies and microstructures were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The solution-processed thin-film transistors based on 2EH-TIFDKT and 2OD-TIFDKT showed ambipolar device operations with electron and hole mobilities as high as 0.12 cm(2) V-1 s(-1) and 0.02 cm(2) V-1 s(-1), respectively, with Ion/Ioff ratios of 105 to 106. Here, we demonstrate that rational repositioning of the b-substituents to molecular termini greatly benefits the p-core planarity while maintaining a good solubility, and results in favorable structural and optoelectronic characteristics for more efficient charge-transport in the solid-state. The ambipolar charge carrier mobilities were increased by two-three orders of magnitude in the new indeno[1,2-b]fluorene-6,12-dione-thiophene core on account of the rational side-chain engineering. en_US
dc.description.sponsorship cience Academy, Young Scientist Award (BAGEP) Turkish Academy of Sciences AGU-BAP FOA-2015-24 Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) 113C021 Basic Science Research Program through the National Research Foundation of Korea (NRF) NRF-2014R1A1A1A05002158 Center for Advanced So. Electronics under the Global Frontier Research Program of the Ministry of Science, ICT AMP; Future Planning 2013M3A6A5073175 en_US
dc.identifier.issn 2046-2069
dc.identifier.uri https://doi.org/10.1039/c5ra22359h
dc.identifier.uri https://hdl.handle.net/20.500.12573/1029
dc.identifier.volume Volume 6 Issue 1 Page 212-226 en_US
dc.language.iso eng en_US
dc.publisher ROYAL SOC CHEMISTRYTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND en_US
dc.relation.isversionof 10.1039/c5ra22359h en_US
dc.relation.journal RSC ADVANCES en_US
dc.relation.publicationcategory Makale - Uluslararası - Editör Denetimli Dergi en_US
dc.relation.tubitak 113C021
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject FIELD-EFFECT TRANSISTORS en_US
dc.subject THIN-FILM TRANSISTORS en_US
dc.subject LIGHT-EMITTING TRANSISTORS en_US
dc.title Design, synthesis, and characterization of alpha,omega-disubstituted indeno[1,2-b]fluorene-6,12-dione-thiophene molecular semiconductors. Enhancement of ambipolar charge transport through synthetic tailoring of alkyl substituents en_US
dc.type article en_US

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