Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

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dc.contributor.author Fabiano, Simone
dc.contributor.author Usta, Hakan
dc.contributor.author Forchheimer, Robert
dc.contributor.author Crispin, Xavier
dc.contributor.author Facchetti, Antonio
dc.contributor.author Berggren, Magnus
dc.contributor.authorID 0000-0001-5154-0291 en_US
dc.contributor.authorID 0000-0001-7016-6514 en_US
dc.contributor.authorID 0000-0002-0618-1979 en_US
dc.contributor.authorID 0000-0002-8175-7958 en_US
dc.contributor.department AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü en_US
dc.contributor.institutionauthor Usta, Hakan
dc.date.accessioned 2022-10-10T11:33:12Z
dc.date.available 2022-10-10T11:33:12Z
dc.date.issued 2014 en_US
dc.description.abstract Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations. en_US
dc.description.sponsorship Advanced Functional Materials Center at Linkoping University Onnesjo Foundation Knut and Alice Wallenberg Foundation (Power Paper project, scholars) Vinnova Swedish Energy Agency en_US
dc.identifier.endpage 7443 en_US
dc.identifier.issn 0935-9648
dc.identifier.issn 1521-4095
dc.identifier.issue 44 en_US
dc.identifier.startpage 7438 en_US
dc.identifier.uri https://doi.org/10.1002/adma.201403070
dc.identifier.uri https://hdl.handle.net/20.500.12573/1380
dc.identifier.volume 26 en_US
dc.language.iso eng en_US
dc.publisher WILEY-V C H VERLAG GMBHPOSTFACH 101161, 69451 WEINHEIM, GERMANY en_US
dc.relation.isversionof 10.1002/adma.201403070 en_US
dc.relation.journal ADVANCED MATERIALS en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.title Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient en_US
dc.type article en_US

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