Naphthalene Diimide-Based Polymeric Semiconductors. Effect of Chlorine Incorporation and N-Channel Transistors Operating in Water

dc.contributor.author Ryu, Gi-Seong
dc.contributor.author Chen, Zhihua
dc.contributor.author Usta, Hakan
dc.contributor.author Noh, Yong-Young
dc.contributor.author Facchetti, Antonio
dc.date.accessioned 2025-09-25T10:53:02Z
dc.date.available 2025-09-25T10:53:02Z
dc.date.issued 2016-03
dc.description Facchetti, Antonio/0000-0002-8175-7958; Noh, Yong-Young/0000-0001-7222-2401; Usta, Hakan/0000-0002-0618-1979 en_US
dc.description.abstract We demonstrate here the design, synthesis and characterization of two new chlorinated polymers, P(NDI2HD-T2Cl2) and P(NDI2OD-T2Cl2) based on N,N-difunctionalized naphthalene diimide (NDI) and 3,3-dichloro-2,2-bithiophene (T2Cl2) moieties. Our results indicate that organic thin-film transistors (OTFTs) based on these new chlorinated polymers exhibit electron mobilities approaching 0.1 cm(2)V(-1)s(-1) (I-on:I-off similar to 10(6)-10(7)), with far less ambipolarity due to their lower highest occupied molecular orbital energies, and they are more stable under deleterious high-humidity conditions (RH similar to 60%) and upon submersion in water, compared with those fabricated with the parent non-chlorinated polymers. In addition, OTFTs fabricated with the new chlorinated polymers exhibit excellent operational stabilities with <3% degradations upon bias-stress test. en_US
dc.description.sponsorship KAU [4-130-36-HiCi]; National Research Foundation of Korea (NRF) - Korean Government (MSIP) [NRF-2014R1A2A2A01007159] en_US
dc.description.sponsorship AF thanks KAU (grant no. 4-130-36-HiCi) for support. This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean Government (MSIP) (NRF-2014R1A2A2A01007159). GSR and YYN thanks to Paul S. K. Amegadze for helpful discussion. en_US
dc.identifier.doi 10.1557/mrc.2016.4
dc.identifier.issn 2159-6859
dc.identifier.issn 2159-6867
dc.identifier.scopus 2-s2.0-84979519574
dc.identifier.uri https://doi.org/10.1557/mrc.2016.4
dc.identifier.uri https://hdl.handle.net/20.500.12573/4261
dc.language.iso en en_US
dc.publisher Springer Heidelberg en_US
dc.relation.ispartof Mrs Communications en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.title Naphthalene Diimide-Based Polymeric Semiconductors. Effect of Chlorine Incorporation and N-Channel Transistors Operating in Water en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Facchetti, Antonio/0000-0002-8175-7958
gdc.author.id Noh, Yong-Young/0000-0001-7222-2401
gdc.author.id Usta, Hakan/0000-0002-0618-1979
gdc.author.scopusid 8592570600
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gdc.author.scopusid 7006018712
gdc.author.scopusid 7004171869
gdc.author.wosid Facchetti, Antonio/B-8034-2014
gdc.author.wosid Facchetti, Antonio/B-8034-2014
gdc.author.wosid 陈, 志华/Hlx-9079-2023
gdc.author.wosid Noh, Yong-Young/Ahb-1910-2022
gdc.author.wosid Noh, Yong-Young/Ahb-1910-2022
gdc.author.wosid Usta, Hakan/L-6636-2013
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gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial true
gdc.description.department Abdullah Gül University en_US
gdc.description.departmenttemp [Ryu, Gi-Seong; Noh, Yong-Young] Dongguk Univ, Adv Energy & Elect Mat Res Ctr, 30 Pil Dong Ro,1-gil, Seoul 100715, South Korea; [Chen, Zhihua; Facchetti, Antonio] Polyera Corp, 8045 Lamon Ave, Skokie, IL USA; [Usta, Hakan] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, Kayseri, Turkey; [Noh, Yong-Young] Dongguk Univ, Dept Energy & Mat Engn, 30 Pil Dong Ro,1-gil, Seoul 100715, South Korea; [Facchetti, Antonio] King Abdulaziz Univ, CEAMR, Jeddah 21413, Saudi Arabia en_US
gdc.description.endpage 60 en_US
gdc.description.issue 1 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q3
gdc.description.startpage 47 en_US
gdc.description.volume 6 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q3
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gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
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gdc.opencitations.count 32
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