Naphthalene Diimide-Based Polymeric Semiconductors. Effect of Chlorine Incorporation and N-Channel Transistors Operating in Water
| dc.contributor.author | Ryu, Gi-Seong | |
| dc.contributor.author | Chen, Zhihua | |
| dc.contributor.author | Usta, Hakan | |
| dc.contributor.author | Noh, Yong-Young | |
| dc.contributor.author | Facchetti, Antonio | |
| dc.date.accessioned | 2025-09-25T10:53:02Z | |
| dc.date.available | 2025-09-25T10:53:02Z | |
| dc.date.issued | 2016 | |
| dc.description | Facchetti, Antonio/0000-0002-8175-7958; Noh, Yong-Young/0000-0001-7222-2401; Usta, Hakan/0000-0002-0618-1979 | en_US |
| dc.description.abstract | We demonstrate here the design, synthesis and characterization of two new chlorinated polymers, P(NDI2HD-T2Cl2) and P(NDI2OD-T2Cl2) based on N,N-difunctionalized naphthalene diimide (NDI) and 3,3-dichloro-2,2-bithiophene (T2Cl2) moieties. Our results indicate that organic thin-film transistors (OTFTs) based on these new chlorinated polymers exhibit electron mobilities approaching 0.1 cm(2)V(-1)s(-1) (I-on:I-off similar to 10(6)-10(7)), with far less ambipolarity due to their lower highest occupied molecular orbital energies, and they are more stable under deleterious high-humidity conditions (RH similar to 60%) and upon submersion in water, compared with those fabricated with the parent non-chlorinated polymers. In addition, OTFTs fabricated with the new chlorinated polymers exhibit excellent operational stabilities with <3% degradations upon bias-stress test. | en_US |
| dc.description.sponsorship | KAU [4-130-36-HiCi]; National Research Foundation of Korea (NRF) - Korean Government (MSIP) [NRF-2014R1A2A2A01007159] | en_US |
| dc.description.sponsorship | AF thanks KAU (grant no. 4-130-36-HiCi) for support. This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean Government (MSIP) (NRF-2014R1A2A2A01007159). GSR and YYN thanks to Paul S. K. Amegadze for helpful discussion. | en_US |
| dc.identifier.doi | 10.1557/mrc.2016.4 | |
| dc.identifier.issn | 2159-6859 | |
| dc.identifier.issn | 2159-6867 | |
| dc.identifier.scopus | 2-s2.0-84979519574 | |
| dc.identifier.uri | https://doi.org/10.1557/mrc.2016.4 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12573/4261 | |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Heidelberg | en_US |
| dc.relation.ispartof | Mrs Communications | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.title | Naphthalene Diimide-Based Polymeric Semiconductors. Effect of Chlorine Incorporation and N-Channel Transistors Operating in Water | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Facchetti, Antonio/0000-0002-8175-7958 | |
| gdc.author.id | Noh, Yong-Young/0000-0001-7222-2401 | |
| gdc.author.id | Usta, Hakan/0000-0002-0618-1979 | |
| gdc.author.scopusid | 8592570600 | |
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| gdc.author.scopusid | 7006018712 | |
| gdc.author.scopusid | 7004171869 | |
| gdc.author.wosid | Facchetti, Antonio/B-8034-2014 | |
| gdc.author.wosid | Facchetti, Antonio/B-8034-2014 | |
| gdc.author.wosid | 陈, 志华/Hlx-9079-2023 | |
| gdc.author.wosid | Noh, Yong-Young/Ahb-1910-2022 | |
| gdc.author.wosid | Noh, Yong-Young/Ahb-1910-2022 | |
| gdc.author.wosid | Usta, Hakan/L-6636-2013 | |
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| gdc.coar.access | metadata only access | |
| gdc.coar.type | text::journal::journal article | |
| gdc.collaboration.industrial | true | |
| gdc.description.department | Abdullah Gül University | en_US |
| gdc.description.departmenttemp | [Ryu, Gi-Seong; Noh, Yong-Young] Dongguk Univ, Adv Energy & Elect Mat Res Ctr, 30 Pil Dong Ro,1-gil, Seoul 100715, South Korea; [Chen, Zhihua; Facchetti, Antonio] Polyera Corp, 8045 Lamon Ave, Skokie, IL USA; [Usta, Hakan] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, Kayseri, Turkey; [Noh, Yong-Young] Dongguk Univ, Dept Energy & Mat Engn, 30 Pil Dong Ro,1-gil, Seoul 100715, South Korea; [Facchetti, Antonio] King Abdulaziz Univ, CEAMR, Jeddah 21413, Saudi Arabia | en_US |
| gdc.description.endpage | 60 | en_US |
| gdc.description.issue | 1 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q3 | |
| gdc.description.startpage | 47 | en_US |
| gdc.description.volume | 6 | en_US |
| gdc.description.woscitationindex | Science Citation Index Expanded | |
| gdc.description.wosquality | Q3 | |
| gdc.identifier.openalex | W2405887589 | |
| gdc.identifier.wos | WOS:000373299000007 | |
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| gdc.oaire.sciencefields | 02 engineering and technology | |
| gdc.oaire.sciencefields | 0210 nano-technology | |
| gdc.oaire.sciencefields | 01 natural sciences | |
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| gdc.opencitations.count | 32 | |
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| gdc.virtual.author | Usta, Hakan | |
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