Perfluoroalkyl-Functionalized Thiazole Thiophene Oligomers as N-Channel Semiconductors in Organic Field-Effect and Light-Emitting Transistors
| dc.contributor.author | Usta, Hakan | |
| dc.contributor.author | Sheets, William Christopher | |
| dc.contributor.author | Denti, Mitchell | |
| dc.contributor.author | Generali, Gianluca | |
| dc.contributor.author | Capelli, Raffaella | |
| dc.contributor.author | Lu, Shaofeng | |
| dc.contributor.author | Facchetti, Antonio | |
| dc.date.accessioned | 2025-09-25T10:54:34Z | |
| dc.date.available | 2025-09-25T10:54:34Z | |
| dc.date.issued | 2014 | |
| dc.description | Usta, Hakan/0000-0002-0618-1979; Facchetti, Antonio/0000-0002-8175-7958; Yu, Xinge/0000-0003-0522-1171; Generali, Gianluca/0000-0002-5999-3911; Capelli, Raffaella/0000-0001-8442-0202; Muccini, Michele/0000-0003-0489-8316; | en_US |
| dc.description.abstract | Despite their favorable electronic and structural properties, the synthetic development and incorporation of thiazole-based building blocks into n-type semiconductors has lagged behind that of other pi-deficient building blocks. Since thiazole insertion into pi-conjugated systems is synthetically more demanding, continuous research efforts are essential to underscore their properties in electron-transporting devices. Here, we report the design, synthesis, and characterization of a new series of thiazolethiophene tetra- (1 and 2) and hexa-heteroaryl (3 and 4) co-oligomers, varied by core extension and regiochemistry, which are end-functionalized with electron-withdrawing perfluorohexyl substituents. These new semiconductors are found to exhibit excellent n-channel OFET transport with electron mobilities (mu(e)) as high as 1.30 cm(2)/(V center dot s) (I-on/I-off > 10(6)) for films of 2 deposited at room temperature. In contrary to previous studies, we show here that 2,2'-bithiazole can be a very practical building block for high-performance n-channel semiconductors. Additionally, upon 2,2'- and 5,5'-bithiazole insertion into a sexithiophene backbone of well-known DFH-6T, significant charge transport improvements (from 0.0010.021 cm(2)/(V center dot s) to 0.200.70 cm(2)/(V center dot s)) were observed for 3 and 4. Analysis of the thin-film morphological and microstructural characteristics, in combination with the physicochemical properties, explains the observed high mobilities for the present semiconductors. Finally, we demonstrate for the first time implementation of a thiazole semiconductor (2) into a trilayer light-emitting transistor (OLET) enabling green light emission. Our results show that thiazole is a promising building block for efficient electron transport in ?-conjugated semiconductor thin-films, and it should be studied more in future optoelectronic applications. | en_US |
| dc.identifier.doi | 10.1021/cm503203w | |
| dc.identifier.issn | 0897-4756 | |
| dc.identifier.issn | 1520-5002 | |
| dc.identifier.scopus | 2-s2.0-84912523575 | |
| dc.identifier.uri | https://doi.org/10.1021/cm503203w | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12573/4395 | |
| dc.language.iso | en | en_US |
| dc.publisher | Amer Chemical Soc | en_US |
| dc.relation.ispartof | Chemistry of Materials | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.title | Perfluoroalkyl-Functionalized Thiazole Thiophene Oligomers as N-Channel Semiconductors in Organic Field-Effect and Light-Emitting Transistors | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Usta, Hakan/0000-0002-0618-1979 | |
| gdc.author.id | Facchetti, Antonio/0000-0002-8175-7958 | |
| gdc.author.id | Yu, Xinge/0000-0003-0522-1171 | |
| gdc.author.id | Generali, Gianluca/0000-0002-5999-3911 | |
| gdc.author.id | Capelli, Raffaella/0000-0001-8442-0202 | |
| gdc.author.id | Muccini, Michele/0000-0003-0489-8316 | |
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| gdc.author.wosid | Usta, Hakan/L-6636-2013 | |
| gdc.author.wosid | Yu, Xinge/Abd-8753-2021 | |
| gdc.author.wosid | Facchetti, Antonio/B-8034-2014 | |
| gdc.author.wosid | Capelli, Raffaella/N-5625-2015 | |
| gdc.author.wosid | Generali, Gianluca/G-5404-2018 | |
| gdc.author.wosid | Muccini, Michele/D-6935-2018 | |
| gdc.author.wosid | Facchetti, Antonio/B-8034-2014 | |
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| gdc.description.department | Abdullah Gül University | en_US |
| gdc.description.departmenttemp | [Usta, Hakan] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, Kayseri, Turkey; [Sheets, William Christopher; Denti, Mitchell; Lu, Shaofeng; Facchetti, Antonio] Polyera Corp, Skokie, IL 60077 USA; [Generali, Gianluca; Capelli, Raffaella; Muccini, Michele] CNR, ISMN, I-40129 Bologna, Italy; [Yu, Xinge; Facchetti, Antonio] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA; [Yu, Xinge; Facchetti, Antonio] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA | en_US |
| gdc.description.endpage | 6556 | en_US |
| gdc.description.issue | 22 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q1 | |
| gdc.description.startpage | 6542 | en_US |
| gdc.description.volume | 26 | en_US |
| gdc.description.woscitationindex | Science Citation Index Expanded | |
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| gdc.oaire.keywords | light emitting transistors; n-type semiconductor; molecular structure tailoring | |
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