N-Type Molecular Thermoelectrics Based on Solution-Doped Indenofluorene-Dimalononitrile: Simultaneous Enhancement of Doping Level and Molecular Order

dc.contributor.author Wang, Suhao
dc.contributor.author Wei, Huan
dc.contributor.author Rillaerts, Antoine
dc.contributor.author Deneme, Ibrahim
dc.contributor.author Depriester, Michael
dc.contributor.author Manikandan, Suraj
dc.contributor.author Pisula, Wojciech
dc.date.accessioned 2025-09-25T10:52:58Z
dc.date.available 2025-09-25T10:52:58Z
dc.date.issued 2025
dc.description Andreasen, Jens Wenzel/0000-0002-3145-0229; Wang, Suhao/0000-0002-6295-7639 en_US
dc.description.abstract The development of n-type organic thermoelectric materials, especially pi-conjugated small molecules, lags far behind their p-type counterparts, due primarily to the scarcity of efficient electron-transporting molecules and the typically low electron affinities of n-type conjugated molecules that leads to inefficient n-doping. Herein, the n-doping of two functionalized (carbonyl vs dicyanovinylene) indenofluorene-based conjugated small molecules, 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (TIFDKT) and 2,2 '-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile (TIFDMT) are demonstrated, with n-type dopant N-DMBI. While TIFDKT shows decent miscibility with N-DMBI, it can be hardly n-doped owing to its insufficiently low LUMO. On the other hand, TIFDMT, despite a poorer miscibility with N-DMBI, can be efficiently n-doped, reaching a respectable electrical conductivity of 0.16 S cm-1. Electron paramagnetic resonance measurements confirm the efficient n-doping of TIFDMT. Based on density functional theory (DFT) calculations, the LUMO frontier orbital energy of TIFDMT is much lower, and its wave function is more delocalized compared to TIFDKT. Additionally, the polarons are more delocalized in the n-doped TIFDMT. Remarkably, as indicated by the grazing-incidence wide-angle X-ray scattering (GIWAXS), the molecular order for TIFDMT thin-film is enhanced by n-doping, leading to more favorable packing with edge-on orientation and shorter pi-pi stacking distances (from 3.61 to 3.36 & Aring;). This induces more efficient charge transport in the doped state. Upon optimization, a decent thermoelectric power factor of 0.25 mu Wm-1K-2 is achieved for n-doped TIFDMT. This work reveals the effect of carbonyl vs dicyanovinylene on the n-doping efficiency, microstructure evolution upon doping and thermoelectric performance, offering a stepping stone for the future design of efficient n-type thermoelectric molecules. N-doping of two functionalized (carbonyl vs dicyanovinylene) indenofluorene-based conjugated small molecules TIFDKT and TIFDMT is investigated. Remarkably, TIFDMT with a much lower LUMO energy, can be efficiently n-doped to a respectable electrical conductivity of 0.16 S cm-1. Moreover, n-doping of TIFDMT leads to more favorable packing and shorter pi-pi stacking distances, resulting in efficient charge transport in the doped state. image en_US
dc.description.sponsorship Agence Nationale de la Recherche [ANR-23-CPJ1-0047-01]; Universit du Littoral Cte d'Opale (ULCO); National Key Research and Development Program [2022YFB3603802]; National Natural Science Foundation of China [62222403, 62074054, U21A20497]; Natural Science Foundation of Hunan Province [2022JJ10019]; Shenzhen Science and Technology Innovation Commission [RCYX20200714114537036]; F.R.S.-FNRS [2.5020.11]; AGU-BAP (Abdullah Gl University-Scientific Research Projects Funding Program) [FYL-2018-115]; National Science Centre, Poland [UMO-2019/33/B/ST3/1550] en_US
dc.description.sponsorship S.W. and H.W. contributed equally to this work. S.W. gratefully acknowledges Agence Nationale de la Recherche (ANR-23-CPJ1-0047-01) and Universite du Littoral Cpte d'Opale (ULCO) for financial support. Y.H. thanks the National Key Research and Development Program (2022YFB3603802), the National Natural Science Foundation of China (62222403; 62074054; U21A20497), the Natural Science Foundation of Hunan Province (2022JJ10019), and Shenzhen Science and Technology Innovation Commission (RCYX20200714114537036) for financial support. Computational resources were provided by the Consortium des Equipements de Calcul Intensif (CECI) funded by F.R.S.-FNRS under Grant 2.5020.11. J.C. is an FNRS research director. H.U. and I.D. acknowledge support from the AGU-BAP (Abdullah Guel University-Scientific Research Projects Funding Program) (FYL-2018-115). W.P. acknowledges the National Science Centre, Poland, through the grant UMO-2019/33/B/ST3/1550. S.W. gratefully acknowledges Prof. Abdelhak Hadj Sahraoui and Dr. Mathieu Bardoux for their help in setting up the equipment. en_US
dc.identifier.doi 10.1002/admt.202401131
dc.identifier.issn 2365-709X
dc.identifier.scopus 2-s2.0-85204801273
dc.identifier.uri https://doi.org/10.1002/admt.202401131
dc.identifier.uri https://hdl.handle.net/20.500.12573/4252
dc.language.iso en en_US
dc.publisher Wiley en_US
dc.relation.ispartof Advanced Materials Technologies en_US
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject Charge Transport en_US
dc.subject Dft Calculations en_US
dc.subject Green Energy en_US
dc.subject N-Doping en_US
dc.subject Organic Thermoelectrics en_US
dc.title N-Type Molecular Thermoelectrics Based on Solution-Doped Indenofluorene-Dimalononitrile: Simultaneous Enhancement of Doping Level and Molecular Order en_US
dc.type Article en_US
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gdc.author.id Andreasen, Jens Wenzel/0000-0002-3145-0229
gdc.author.id Wang, Suhao/0000-0002-6295-7639
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gdc.author.wosid Usta, Hakan/L-6636-2013
gdc.author.wosid Hu, Yuanyuan/J-5017-2016
gdc.author.wosid Andreasen, Jens/F-4634-2014
gdc.author.wosid Wang, Suhao/Itt-4571-2023
gdc.author.wosid Andreasen, Jens Wenzel/F-4634-2014
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gdc.description.department Abdullah Gül University en_US
gdc.description.departmenttemp [Wang, Suhao; Depriester, Michael; Daoudi, Abdelylah; Longuemart, Stephane] Univ Littoral Cote dOpale, Unite Dynam & Struct Mat Mol, 145 Ave Maurice Schumann, F-59140 Dunkerque, France; [Wei, Huan; Hu, Yuanyuan] Hunan Univ, Changsha Semicond Technol & Applicat Innovat Res I, Coll Semicond, Coll Integrated Circuits, Changsha 410082, Peoples R China; [Wei, Huan; Hu, Yuanyuan] Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China; [Rillaerts, Antoine; Cornil, Jerome] Univ Mons, Serv Chim Mat Nouveaux, B-7000 Mons, Belgium; [Deneme, Ibrahim; Usta, Hakan] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, TR-38080 Kayseri, Turkiye; [Manikandan, Suraj; Andreasen, Jens Wenzel] Tech Univ Denmark, Dept Energy Convers & Storage, DK-2800 Lyngby, Denmark; [Peralta, Sebastien] CY Cergy Univ, Lab Physicochim Polymeres & Interfaces, 5 Mail Gay Lussac, F-95000 Neuville Sur Oise, France; [Pisula, Wojciech] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany; [Pisula, Wojciech] Lodz Univ Technol, Fac Chem, Dept Mol Phys, Zeromskiego 116, PL-90924 Lodz, Poland en_US
gdc.description.issue 1 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q1
gdc.description.volume 10 en_US
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gdc.oaire.keywords green energy
gdc.oaire.keywords organic thermoelectrics
gdc.oaire.keywords Green energy
gdc.oaire.keywords Organic thermoelectrics
gdc.oaire.keywords Charge transport
gdc.oaire.keywords DFT calculations
gdc.oaire.keywords charge transport
gdc.oaire.keywords N-doping
gdc.oaire.keywords [PHYS] Physics [physics]
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