Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2 Mixed-Dimensional Heterostructures

dc.contributor.author Liu, Xiaolong
dc.contributor.author Balla, Itamar
dc.contributor.author Sangwan, Vinod K.
dc.contributor.author Usta, Hakan
dc.contributor.author Facchetti, Antonio
dc.contributor.author Marks, Tobin J.
dc.contributor.author Hersam, Mark C.
dc.date.accessioned 2025-09-25T11:00:45Z
dc.date.available 2025-09-25T11:00:45Z
dc.date.issued 2019
dc.description Hersam, Mark/0000-0003-4120-1426; Balla, Itamar/0000-0002-9358-5743; Facchetti, Antonio/0000-0002-8175-7958; Usta, Hakan/0000-0002-0618-1979; Sangwan, Vinod/0000-0002-5623-5285 en_US
dc.description.abstract Mixed-dimensional van der Waals heterostructures combine the advantages of nanomaterials with qualitatively distinct properties such as the extended bandstructures and high charge carrier mobilities of inorganic two-dimensional materials and the discrete orbital energy levels and strong optical absorption of zero-dimensional organic molecules. The synergistic interplay between nanomaterials of distinct dimensionality has enabled a variety of unique applications such as antiambipolar transistors, sensitized photodetectors, and gate-tunable photovoltaics. Because the performance of mixed-dimensional heterostructure devices depends sensitively on the buried interfacial structure, it is of great interest to identify materials and chemistries that naturally form highly ordered heterointerfaces. Toward this end, here we demonstrate ultrahigh vacuum self-assembly of 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT) monolayers onto epitaxial MoS2/graphene heterostructures. With molecular-resolution scanning tunneling microscopy and spectroscopy, the resulting C8-BTBT/MoS2/graphene mixed-dimensional heterostructures are found to be rotationally commensurate with well-defined physical and electronic structures. It is further shown that the self-assembled C8-BTBT monolayers are insensitive to the structural defects and electronic perturbations of the underlying MoS2 substrate, which provides significant processing latitude. For these reasons, this work will facilitate ongoing efforts to utilize organic/MoS2/graphene mixed-dimensional heterostructures for electronic, optoelectronic, and photovoltaic applications. en_US
dc.description.sponsorship Office of Naval Research [ONR N00014-17-1-2993]; National Science Foundation Materials Research Science and Engineering Center [NSF DMR-1720139]; National Institute of Standards and Technology [NIST CHiMaD 70NANB14H012]; Ryan Fellowship en_US
dc.description.sponsorship We acknowledge support from the Office of Naval Research (ONR N00014-17-1-2993) and the National Science Foundation Materials Research Science and Engineering Center (NSF DMR-1720139). CVD growth of MoS<INF>2</INF> was supported by the National Institute of Standards and Technology (NIST CHiMaD 70NANB14H012). X.L. further acknowledges support from a Ryan Fellowship that is administered through the Northwestern University International Institute for Nano technology. en_US
dc.identifier.doi 10.1021/acs.chemmater.8b05348
dc.identifier.issn 0897-4756
dc.identifier.issn 1520-5002
dc.identifier.scopus 2-s2.0-85062343096
dc.identifier.uri https://doi.org/10.1021/acs.chemmater.8b05348
dc.identifier.uri https://hdl.handle.net/20.500.12573/4925
dc.language.iso en en_US
dc.publisher Amer Chemical Soc en_US
dc.relation.ispartof Chemistry of Materials en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.title Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2 Mixed-Dimensional Heterostructures en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Hersam, Mark/0000-0003-4120-1426
gdc.author.id Balla, Itamar/0000-0002-9358-5743
gdc.author.id Facchetti, Antonio/0000-0002-8175-7958
gdc.author.id Usta, Hakan/0000-0002-0618-1979
gdc.author.id Sangwan, Vinod/0000-0002-5623-5285
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gdc.author.scopusid 7102088807
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gdc.author.wosid Balla, Itamar/I-4102-2016
gdc.author.wosid Marks, Tobin/Aag-1472-2019
gdc.author.wosid Facchetti, Antonio/B-8034-2014
gdc.author.wosid Facchetti, Antonio/B-8034-2014
gdc.author.wosid Liu, Xiaolong/P-6477-2019
gdc.author.wosid Sangwan, Vinod/D-4326-2013
gdc.bip.impulseclass C4
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gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.department Abdullah Gül University en_US
gdc.description.departmenttemp [Liu, Xiaolong; Marks, Tobin J.; Hersam, Mark C.] Northwestern Univ, Appl Phys Grad Program, Evanston, IL 60208 USA; [Balla, Itamar; Sangwan, Vinod K.; Marks, Tobin J.; Hersam, Mark C.] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA; [Facchetti, Antonio; Marks, Tobin J.; Hersam, Mark C.] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA; [Hersam, Mark C.] Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA; [Usta, Hakan] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, TR-38080 Kayseri, Turkey en_US
gdc.description.endpage 1766 en_US
gdc.description.issue 5 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q1
gdc.description.startpage 1761 en_US
gdc.description.volume 31 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q1
gdc.identifier.openalex W2914848146
gdc.identifier.wos WOS:000461532700035
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gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
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gdc.opencitations.count 17
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gdc.virtual.author Usta, Hakan
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