Yazıcı, Ahmet Faruk
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Ahmet Faruk Yazıcı
Yazici, Ahmet F.
Yazici, Ahmet Faruk
Yazıcı, Ahmet Faruk
Yazici, Ahmet F.
Yazici, Ahmet Faruk
Yazıcı, Ahmet Faruk
Job Title
Arş. Gör.
Email Address
ahmet.yazici@agu.edu.tr
Main Affiliation
02.07. Malzeme Bilimi ve Nanoteknoloji Mühendisliği
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Current Staff
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Sustainable Development Goals
SDG data is not available
Documents
22
Citations
219
h-index
10
Documents
21
Citations
211
Scholarly Output
22
Articles
18
Views / Downloads
356/43
Supervised MSc Theses
0
Supervised PhD Theses
1
WoS Citation Count
178
Scopus Citation Count
185
Patents
0
Projects
3
WoS Citations per Publication
8.09
Scopus Citations per Publication
8.41
Open Access Source
9
Supervised Theses
1
| Journal | Count |
|---|---|
| ACS Applied Nano Materials | 2 |
| Advanced Optical Materials | 2 |
| Advanced Materials Interfaces | 1 |
| Ceramics International | 1 |
| Chemical Engineering Journal | 1 |
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22 results
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Now showing 1 - 10 of 22
Conference Object Citation - Scopus: 1Color Simulation and Demonstration of Perovskite Nanocrystal Filters for Wide Color Gamut Displays(Institute of Electrical and Electronics Engineers Inc., 2018) Genc, Sinan; Yazici, Ahmet F.; Beskazak, Emre; Uran, Can; Mutlugün, EvrenIn this study, we define spectral parameters of perovskite nanocrystals to improve LCD color gamut, replacing color filters (CFs) with perovskite based subpixels. The optimization of the CFs has been enhanced 15.8% (98.43% of Rec.2020) in simulation and 13.8% experimentally, with 97.37% color gamut coverage. © 2019 Elsevier B.V., All rights reserved.Article Citation - WoS: 2Citation - Scopus: 1Toward Sustainable Optoelectronics: Solution-Processed Quantum Dot Photodetector Fabrication Using a Surgical Blade(SPIE - Society of Photo-Optical Instrumentation Engineers, 2023) Savas, Muzeyyen; Yazici, Ahmet Faruk; Arslan, Aysenur; Mutluguen, Evren; Erdem, Talha; Yazlcl, Ahmet Faruk; Mutlugün, EvrenFabrication of optoelectronic devices relies on expensive, energy-consuming conventional tools including chemical vapor deposition, lithography, and metal evaporation. Furthermore, the films used in these devices are usually deposited at elevated temperatures (> 300 degrees C) and under high vacuum, which necessitate further restrictions on the device fabrication. Developing an alternative technology would contribute to the efforts on achieving a sustainable optoelectronics technology. Keeping this in our focus, here we present a simple technique to fabricate visible photodetectors (PDs). These fully solution-processed and transparent metal-semiconductor-metal (MSM) PDs employ silver nanowires (Ag NW) as the transparent electrodes replacing the indium-tin-oxide (ITO) commonly used in optoelectronic devices. By repeatedly spin coating Ag NWs on a glass substrate followed by the coating of zinc oxide nanoparticles, we obtained a highly conductive transparent electrode reaching a sheet resistance of 95 omega/? as measured by the four-probe method. Optical spectroscopy revealed that the transmittance of the Ag NW-ZnO films was 84% at 450 nm while the transmittance of the ITO films was 90% at the same wavelength. Following the formation of the conductive film, we scratched it using a heated surgical blade to open a gap. The scanning electron microscope images indicate that a gap of similar to 30 mu m is opened forming an insulating line. As the active layer, we drop-casted red-emitting CdSe/ZnS core-shell quantum dots (QDs) onto this gap to form a MSM PD. These visible QD-based PDs exhibited responsivities and detectivities up to 8.5 mA/W and 0.95 x 109 Jones, respectively at a bias voltage of 5 V and wavelength of 650 nm. These proof-of-concept PDs show that the environmentally friendly, low-cost, and energy-saving technique presented here can be an alternative to conventional, high-cost, and energy-hungry techniques while fabricating photoconductive devices.Conference Object Simple, Sustainable Fabrication of Fully Solution-Processed, Transparent, Metal-Semiconductor Photodetectors Using a Surgical Blade as an Alternative to Conventional Tools(SPIE - The International Society for Optics and Photonics, 2022) Savas, Muzeyyen; Yazici, Ahmet Faruk; Arslan, Aysenur; Mutlugun, Evren; Erdem, Talha; Yazic, Ahmet Faruk; Erdem1, TalhaFabrication of optoelectronic devices relies on the expensive, energy-consuming conventional tools such as chemical vapor deposition, lithography, and metal evaporation. Furthermore, the films used in these devices are usually deposited at elevated temperatures and under vacuum that impose further restrictions to the device fabrication. Developing an alternative technology would contribute to the efforts on achieving a more sustainable optoelectronics technology. Keeping this focus in our focus, here we present a simple technique to fabricate visible photodetectors. These fully solution-processed and transparent metal-semiconductor-metal photodetectors employ silver nanowires (Ag NW) as the transparent electrodes replacing the indium-tin oxide (ITO) commonly used in optoelectronic devices. By repeatedly spin coating Ag NWs on a glass substrate followed by the coating of ZnO nanoparticles, we obtained a highly conductive transparent electrode reaching a sheet resistance of 95 Omega/square as measured by the four-probe method. Optical spectroscopy revealed that the transmittance of the Ag NW-ZnO films was 84% at 450 nm while transmittance of the ITO films was 90% at same wavelength. Following the formation of the conductive film, we scratched it using a heated surgical blade to open a gap. The scanning electron microscope images indicate that a gap of similar to 30 mm is opened forming an insulating line. As the active layer, we drop-casted red-emitting CdSe/ZnS core-shell quantum dots (QDs) on to this gap to form a metal-semiconductor-metal photodetector. These visible QD- based photodetectors exhibited responsivities and detectivities up to 8.5 mA/W and 0.95x10(9) Jones, respectively. These proof-of-concept photodetectors show that the environmentally friendly, low- cost, and energy-saving technique presented here can be an alternative to conventional, more expensive, and energy-hungry techniques while fabricating light-harvesting devices.Article Citation - WoS: 12Citation - Scopus: 13Highly Luminescent ZnCdTeS Nanocrystals With Wide Spectral Tunability for Efficient Color-Conversion White-Light(IOP Publishing Ltd, 2021) Soheyli, Ehsan; Zargoush, Sirous; Yazici, Ahmet Faruk; Sahraei, Reza; Mutlugun, EvrenCdTe-based semiconductor nanocrystals (NCs) with size and composition-dependent efficient bandgap properties are historically mature nanomaterials for colloidal optoelectronic applications. In this work, we present the highly luminescent quaternary ZnCdTeS NCs with tunable emission across a wide visible spectrum from green to red spectral range. Prepared via a direct aqueous-based approach, a second capping agent of trisodium citrate (TSC) was used to enhance the photoluminescence (PL) emission efficiency, the chemical stability, and to spectrally widen the coverage of the emission spectra of ZnCdTeS NCs. Adding TCS created a remarkable blue shift from 572 nm in the absence of TSC, to 548 nm. On the other hand, upon optimization of experimental parameters, superior ZnCdTeS NCs with a narrow PL profile typically less than 50 nm, the high quantum efficiency of 76%, and tunable emission from 515-to-645 nm were synthesized in an aqueous solvent. The keynotes were the superior and reproducible luminescent properties for the core only NCs, without shell and using relatively low reaction temperatures. It was shown that in the suggested synthesis method, the high efficiency emitted color of ZnCdTeS NCs can be easily controlled from 515-to-650 nm with excellent stability against harsh conditions. The biexponential decay profiles of samples prepared at different reaction temperatures demonstrated that the average recombination lifetime is below 40 ns and increases with the growth of the ZnCdTeS NCs. Results reveal that the excitonic energy levels have the main role in the recombination process. Finally, to demonstrate the functional advantages of the prepared NCs in optoelectronics, the NCs were used to fabricate color-conversion white light-emitting diodes. The color coordinate of the device is recorded as (0.4951, 0.3647) with CRI of 91, CCT of 1954 K, and LER of 251 lm W-1 by employing only two distinct emitters for color conversion.Article Citation - WoS: 16Citation - Scopus: 17Solid-State Encapsulation and Color Tuning in Films of Cesium Lead Halide Perovskite Nanocrystals for White Light Generation(Amer Chemical Soc, 2019) Torun, Ilker; Altintas, Yemliha; Yazici, Ahmet Faruk; Mutlugun, Evren; Onses, M. SerdarPerovskite nanocrystals (PNCs) are highly demanding nanomaterials for solid-state lighting applications. A challenge for their exploitation in practical applications is the insufficient ambient and water stability associated with their ionic nature. Here we report a novel route for solid-state encapsulation of films of perovskite nanocrystals (PNCs) through vapor-phase deposition of a thin and hydrophobic layer of fluoroalkyltrichlorosilanes (FAS). High quality nanoscale crystals of CsPbBr3 were synthesized with well established colloidal methods and coated on solid substrates. The films of PNCs were then subjected to vapor of FAS for short durations of time (<60 s) in ambient atmosphere, resulting in deposition of a thin (<20 nm) hydrophobic layer. Besides providing a barrier for water and humidity, the vapor-phase deposition of FAS was accompanied by the blue shift of the emission wavelength of the PNCs. The color shift results from the partial exchange of Br with Cl anions, which emerge during the self-hydrolysis of the silane molecules. Throughout this process, we demonstrate the enhanced water stability of the films of PNCs and fine tunability of the wavelength in films from 516 nm to 488 nm. The fabrication of a white-light-emitting diode and tunability of the color coordinates with the duration of the FAS deposition were demonstrated. The rapid, scalable, and inexpensive solid-state encapsulation approach shows great promise for films of halide perovskites.Article Citation - WoS: 1Citation - Scopus: 1Tailoring Quantum Dot Shell Thickness and Polyethylenimine Interlayers for Optimization of Inverted Quantum Dot Light-Emitting Diodes(MDPI, 2024) Yazici, Ahmet F.; Ocal, Sema Karabel; Bicer, Aysenur; Serin, Ramis B.; Kacar, Rifat; Ucar, Esin; Mutlugun, EvrenQuantum dot light-emitting diodes (QLEDs) hold great promise for next-generation display applications owing to their exceptional optical properties and versatile tunability. In this study, we investigate the effects of quantum dot (QD) shell thickness, polyethylenimine (PEI) concentration, and PEI layer position on the performance of inverted QLED devices. Two types of alloyed-core/shell QDs with varying shell thicknesses were synthesized using a one-pot method with mean particle sizes of 8.0 +/- 0.9 nm and 10.3 +/- 1.3 nm for thin- and thick-shelled QDs, respectively. Thick-shelled QDs exhibited a higher photoluminescence quantum yield (PLQY) and a narrower emission linewidth compared to their thin-shelled counterparts. Next, QLEDs employing these QDs were fabricated. The incorporation of PEI layers on either side of the QD emissive layer significantly enhanced device performance. Using PEI on the hole transport side resulted in greater improvement than on the electron injection side. Sandwiching the QD layer between two PEI layers led to the best performance, with a maximum external quantum efficiency (EQE) of 17% and a peak luminance of 91,174 cd/m2 achieved using an optimized PEI concentration of 0.025 wt% on both electron injection and hole injection sides. This study highlights the critical role of QD shell engineering and interfacial modification in achieving high-performance QLEDs for display applications.Article Colloidal Photodetectors Based on Engineered Multishelled InP Based Quantum Dots(Institute of Physics, 2026) Akrema; Erol, E.; Savaş, M.; Yazici, A.; Erdem, T.; Mutlugün, E.; Faruk Yazıcı, AhmetIn this work, we present a straightforward and cost-effective approach to synthesize multi-shell InP/ZnSe/ZnSeS/ZnS quantum dots (QDs) that show promising potential for use in photodetectors. By carefully layering ZnSe, ZnSeS, and ZnS shells around an InP core, we were able to enhance the stability and optical performance of the QDs, achieving a narrow emission peak of 45 nm and a high photoluminescence quantum yield of 55%. These QDs were then integrated into simple photodetector devices, which possessed impressive sensitivity and detection capabilities. Specifically, our devices achieved a peak responsivity of 0.54 A W−1 and a detectivity of 2.22 × 1011 Jones at 400 nm with a 5 V bias. This study highlights the potential of InP-based QDs as a safer and more sustainable alternative to traditional QDs that contain toxic heavy metals, offering a viable path forward for developing high-performance optoelectronic devices. Our findings suggest that these InP/ZnSe/ZnSeS/ZnS QDs could be a key material for the next generation of high-performance optoelectronic devices, especially in applications that require highly sensitive and stable photodetectors. © 2026 The Author(s). Published by IOP Publishing Ltd.Article Citation - WoS: 12Citation - Scopus: 11Long-Time Stable Colloidal Zn-Ag Quantum Dots With Tunable Midgap-Involved Emission(AIP Publishing, 2021) Sabzevari, Zahra; Sahraei, Reza; Jawhar, Nawzad Nadhim; Yazici, Ahmet Faruk; Mutlugun, Evren; Soheyli, EhsanQuaternary Zn-Ag-In-S (ZAIS) quantum dots (QDs) with efficient, tunable, and stable photoluminescence (PL) emission were prepared via a simple, effective, and low-cost reflux method. The structural analysis revealed the dominance of the quantum confinement effect. The calculated PL emission quantum yield was enhanced from 8.2% to 28.7% with experimental parameters indicating their marked influence on the PL emission properties of the final product. Particularly, it was found that by varying the precursors' feeding ratio, tunable emission from green to red was achieved. A set of direct and indirect pieces of evidence such as the broad-band emission spectrum (FWHM>100nm), large Stokes shift more than 120nm, and predominantly a biexponentially long-lived decay profile with an average lifetime of about 366ns were observed, showing the contribution of midgap localized energy levels in the recombination process. These data were obtained independently on the experimental condition used, which confirmed that this is mostly an intrinsic electronic property of quaternary In-based QDs. Finally, to ensure the stability of QDs in terms of colloidal and optical emission, their emission ability was evaluated after 26 months of storage. Colloidal QDs were still luminescent with strong yellowish-orange color with emission efficiency of similar to 20.3% after 26 months. The combination of synthesis simplicity, compositional non-toxicity, PL emission superiority (strong, tunable, stable, and long lifetime emission), and colloidal stabilities confirms that the present ZAIS QDs are promising candidates for a wide range of applications in biomedicine, anticounterfeiting, and optoelectronics.Conference Object Arrays of Multi-Color Emitting Cesium Lead Halide Perovskite Nanocrystals and Efficient White Light Generation by Tailored Anion Exchange Reactions and Electrohydrodynamic Jet Printing(Optica Publishing Group (Formerly OSA), 2018) Altıntas, Yemliha; Torun, Ilker; Yazici, Ahmet F.; Beskazak, Emre; Onses, Mustafa Serdar; Mutlugün, EvrenWe employ highly efficient and narrow band emitter Cesium-lead-halide perovskite nanocrystals, optimized by the anion exchange method, for efficient white light generation by patterning multiple lines of different colors via proposed electrohydrodynamic jet printing. © 2023 Elsevier B.V., All rights reserved.Article Citation - WoS: 11Citation - Scopus: 14Nanowire-Shaped MoS2@MoO3 Nanocomposites as a Hole Injection Layer for Quantum Dot Light-Emitting Diodes(Amer Chemical Soc, 2022) Bastami, Nasim; Soheyli, Ehsan; Arslan, Aysenur; Sahraei, Reza; Yazici, Ahmet Faruk; Mutlugun, EvrenMolybdenum disulfides and molybdenum trioxides are structures that possess the potential to work as efficient charge transport layers in optoelectronic devices. In the present study, as opposed to the existing Mo-based nanostructures in flake, sheet, or spherical forms, an extremely simple and low-cost hydrothermal method is used to prepare nanowires (NWs) of MoS2@MoO3 (MSO) composites. The synthesis method includes several advantages including easy handling and processing of inexpensive precursors to reach stable MSO NWs without the need for an oxygen-free medium, which would facilitate the possibility of mass production of these nanostructures. The structural analysis confirmed the formation of MSO nanocomposites with different Mo valence states, as well as NWs of average length and diameter of 70 nm and 5 nm, respectively. In order to demonstrate their potential for optoelectronic applications, MSO NWs were blended into hole injection layers (HILs) in quantum dot-based light emitting diodes (QLEDs). Electroluminescence measurements show a substantial enhancement in both luminance (from 44,330 to 68,630 cd.m-2) and external quantum efficiency (from 1.6 to 2.3%), based on the increase in the ratio of MSO NWs from 3 to 10%. Interestingly, the addition of 10% volume of MSO NWs resulted in a remarkably smoother HIL with improved current efficiency and stability in green-emitting QLEDs. The simplicity and cost-effective features of the synthesis method along with outstanding favorable morphology demonstrated their ability to enhance the QLED performance and mark them as promising agents for optoelectronics.
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