Scopus İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395

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  • Article
    Citation - WoS: 2
    Citation - Scopus: 1
    Ambipolar Small Molecular Semiconductor-Based Heterojunction Diode
    (Elsevier Science SA, 2016-11) Ocaya, R. O.; Ozdemir, Mehmet; Ozdemir, Resul; Al-Ghamdi, Ahmed; Usta, Hakan; Farooq, W. A.; Yakuphanoglu, F.
    A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination. (C) 2016 Elsevier B.V. All rights reserved.