Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
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Article Citation - WoS: 2Citation - Scopus: 2Possible Boron-Rich Amorphous Silicon Borides From Ab Initio Simulations(Springer, 2023-03-10) Karacaoglan, Aysegul Ozlem Cetin; Durandurdu, MuratContextBy means of ab initio molecular dynamics simulations, possible boron-rich amorphous silicon borides (BnSi1-n, 0.5 <= n <= 0.95) are generated and their microstructure, electrical properties and mechanical characters are scrutinized in details. As expected, the mean coordination number of each species increases progressively and more closed packed structures form with increasing B concentration. In all amorphous models, pentagonal pyramid-like configurations are observed and some of which lead to the development of B-12 and B11Si icosahedrons. It should be noted that the B11Si icosahedron does not form in any crystalline silicon borides. Due to the affinity of B atoms to form cage-like clusters, phase separations (Si:B) are perceived in the most models. All simulated amorphous configurations are a semiconducting material on the basis of GGA+U calculations. The bulk modulus of the computer-generated amorphous compounds is in the range of 90 GPa to 182 GPa. As predictable, the Vickers hardness increases with increasing B content and reaches values of 25-33 GPa at 95% B concentration. Due to their electrical and mechanical properties, these materials might offer some practical applications in semiconductor technologies.MethodThe density functional theory (DFT) based ab initio molecular dynamics (AIMD) simulations were used to generate B-rich amorphous configurations.Article Citation - WoS: 3Citation - Scopus: 3Ferromagnetism in Amorphous MgO(Taylor & Francis Ltd, 2017-05-10) Durandurdu, MuratWe report, for the first time, the atomic structure of amorphous MgO based on ab initio molecular dynamics simulations. We find that its main building blocks are four-fold and five-fold coordinated configurations, similar to those formed in the liquid state. Its average coordination is estimated to beabout 4.36. The amorphous form having a perfect stoichiometry has a band gap energy of 2.4eV. On the other hand, Mg vacancies induce an insulator to metal transition and ferromagnetism in amorphous MgO whilst O vacancies do not cause such a transition, implying that the magnetism in amorphous MgO is related to the non-stoichiometry and Mg vacancies. With the application of pressure, the stoichiometric and non-stoichiometric (Mg vacancies) models undergo a phase transformation into a rocksalt state, suggesting that the electronic structure of the initial configurations has no influence on the resulting high-pressure phase in amorphous MgO.Article Citation - WoS: 1Amorphous to Amorphous Phase Transformation in Boron-Rich Amorphous Silicon Borides: An Ab Initio Study(Taylor & Francis Ltd, 2024-05-24) Karacaoglan, Aysegul Ozlem Cetin; Durandurdu, MuratThis study employs a constant-pressure ab initio approach to investigate the high-pressure behavior of five distinct boron-rich amorphous silicon borides. A unique amorphous-to-amorphous phase transition is exposed, providing insights into the structural resilience of these materials under extreme conditions. Our results reveal a gradual increase in the coordination number of both B and Si atoms under pressure, with subsequent densification upon pressure release. Yet the recovered amorphous phases closely resemble the uncompressed states, highlighting the reversibility of these phase changes. Significant structural modifications around Si atoms are observed, emphasizing their pivotal role in the observed phase transitions. Additionally, pressure-induced metallization is witnessed in these materials, indicating their distinctive electronic behavior under high pressure. This work significantly contributes to a deeper understanding of the high-pressure behavior of boron-rich amorphous silicon borides and opens avenues for exploring their potential applications in fields requiring exceptional structural stability and unique pressure-dependent properties.Article Citation - WoS: 10Citation - Scopus: 10Amorphous Zirconia: Ab Initio Molecular Dynamics Simulations(Taylor & Francis Ltd, 2017-02-23) Durandurdu, MuratWe investigate the short-range order of the liquid and amorphous zirconia using an ab initio molecular dynamics technique. Both forms of zirconia are projected to be structurally close to each other. The amorphous network has predominantly seven-fold coordinated Zr atoms (similar to% 65), and three-fold and four-fold coordinated O atoms (similar to 46%), and hence it resembles locally the monoclinic zirconia phase. Within the known limitations of the DFT-GGA calculation, the liquid state is predicted to be semi-metal, whereas the amorphous form is projected to be semiconductor having a band gap energy of similar to 3.5 eV. We find an asymmetry in localisation of the band tail states. On the basis of this finding, we discuss possible distinctions in n-type and p-type doping in amorphous zirconia.Article Citation - WoS: 7Citation - Scopus: 7Amorphous Boron Nitride at High Pressure(Taylor & Francis Ltd, 2016-05-18) Durandurdu, MuratThe pressure-induced phase transformation in hexagonal boron nitrite and amorphous boron nitrite is studied using ab initio molecular dynamics simulations. The hexagonal-to-wurtzite phase transformation is successfully reproduced in the simulation with a transformation mechanism similar to one suggested in experiment. Amorphous boron nitrite, on the other hand, gradually transforms to a high-density amorphous phase with the application of pressure. This phase transformation is irreversible because a densified amorphous state having both sp(3) and sp(2) bonds is recovered upon pressure release. The high-density amorphous state mainly consists of sp(3) bonds and its local structure is quite similar to recently proposed intermediate boron nitrite phases, in particular tetragonal structure (P4(2)/mnm), rather than the known the wurtzite or cubic boron nitrite due to the existence of four membered rings and edge sharing connectivity. On the basis of this finding we propose that amorphous boron nitrite might be best candidate as a starting structure to synthesize the intermediate phase(s) at high pressure and temperature (probably below 800 degrees C) conditions.