Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
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Article Densification-Induced Chemical Reorganization and Mechanical Enhancement in Amorphous Si2BC3N(Elsevier, 2026-02) Durandurdu, MuratThe atomistic mechanisms that govern the mechanical performance of amorphous silicon-boron carbonitride (SiBCN) ceramics remain insufficiently understood, particularly regarding the role of density. Here, we employ ab initio molecular dynamics simulations to elucidate the structural evolution and mechanical response of low-density (LDA, 2.20 g/cm3) and high-density (HDA, 2.53 g/cm3) amorphous Si2BC3N prepared via melt-quench. The HDA phase exhibits markedly higher atomic packing and network connectivity, accompanied by a nontrivial chemical reorganization. Densification significantly enhances heteronuclear bonding-especially Si-C coordination-while suppressing C-C and Si-Si homopolar bonds. These changes yield substantial mechanical strengthening: the HDA phase exhibits a 48% increase in bulk modulus (130 GPa vs. 88 GPa), along with elevated Young's (266 GPa) and shear (112 GPa) moduli. Our findings reveal a clear density-structure-property relationship in amorphous SiBCN, demonstrating that densification suppresses weak self-bonded motifs and promotes a robust, interconnected atomic network. This insight provides a pathway for designing high-performance amorphous SiBCN ceramics for extreme-environment applications.Article Tuning Properties of Amorphous Boron Via Hydrogenation: An Ab Initio Study(Elsevier, 2026-01) Durandurdu, MuratAb initio simulations are employed to investigate the structural, mechanical, and electronic properties of hydrogenated amorphous boron (a-B:H) across a range of hydrogen concentrations (approximate to 6-21 at.%). The results indicate that pentagonal-like boron clusters constitute the primary structural motifs. The bonding environment consists of both B-H terminal bonds and B-H-B bridging bonds, with the fraction of bridging bonds ranging from 10 % to 16 %. Increasing the hydrogen content leads to a reduction in density and bulk modulus, accompanied by a systematic widening of the electronic band gap. These results demonstrate that hydrogen incorporation profoundly modifies the atomic structure, softens the network, and enhances the semiconducting character of a-B:H, highlighting the tunability of properties in boron-based amorphous materials.Article Pressure-Driven Structural Evolution of Amorphous InN(Elsevier, 2025-02) Durandurdu, MuratThrough constant-pressure ab initio simulations, we have uncovered high-pressure phase transformations in amorphous indium nitride for the first time. Our results reveal a distinct two-step progression under compression. Initially, a polyamorphic transition occurs, where the low-density amorphous (LDA) phase transforms into a high-density amorphous (HDA) phase. This HDA structure remains stable in some pressure range and then crystallization initiates, leading to a rocksalt configuration. Upon decompression, the HDA phase reverts to an amorphous network with a slightly higher density and coordination number than the initial LDA state.Article Citation - WoS: 10Citation - Scopus: 11Liquid Boron and Amorphous Boron: An Ab Initio Molecular Dynamics Study(Elsevier, 2015-06) Durandurdu, MuratThe atomic structure of liquid and amorphous boron is investigated using an ab initio molecular dynamics technique. Liquid and amorphous states are found to have notably different microstructures and an average coordination number. Ideal and defective pentagonal pyramidal polyhedrons are the primary building unit of liquid boron but B-12 icosahedra do not exist in the liquid state. During the rapid solidification, more ideal pentagonal pyramids develop progressively, resulting into a gradual formation of B-12 icosahedra. On the basis of our findings, the atomic packing of pure amorphous boron is proposed to be somewhat close to that of the alpha-rhombohedral phase in contrast to the previous suggestions. (C) 2015 Elsevier B.V. All rights reserved.Article High-Density Amorphous Phase of CdO(Elsevier, 2017-05) Durandurdu, MuratAn amorphous CdO model is densified up to a theoretical pressure of 200 GPa. A continues phase transformation from a low-density amorphous (LDA) phase to a high-density amorphous (HDA) phase is observed through the simulation. Associated with the phase transformation, the average coordination raises progressively from similar to 5.5 to similar to 7.0. The sevenfold coordination is the most abundant motifs in the HDA state. Therefore its short-range order differs principally from that of the known CdO crystals. Upon pressure release, an amorphous state being intermediate between the LDA structure and the HDA phase is recovered with a mean coordination number of 5.9. (C) 2017 Elsevier B.V. All rights reserved.Article Citation - WoS: 5Citation - Scopus: 4Densification of Amorphous Boron Under Pressure(Elsevier, 2017-09) Durandurdu, MuratThe densification mechanism of amorphous boron under pressure is investigated using a constant pressure ab initio technique and found to be associated with two consecutive amorphous-to-amorphous phase transformations. Amorphous boron gradually transforms into a high density amorphous phase, followed by a first order phase transformation into another high density amorphous state. The high density amorphous phases of boron are not quenchable to ambient pressure. Most quasimolecular B-12 icosahedra in the model are found to be stable at the highest the theoretical pressure of 280 GPa reached in the present work and thus the phase transformations are principally due to the re-structural arrangements in the parts of the model connecting B-12 icosahedra.Article Citation - WoS: 1Citation - Scopus: 1Amorphous Magnesium Silicide(Elsevier, 2018-10) Durandurdu, MuratA first principles molecular dynamics technique is employed to generate an amorphous magnesium silicide (Mg2Si) model from its liquid state and its structural, electrical and mechanical features are disclosed for the first time. Si atoms form predominantly the standard square dodecahedron-like and the tri-capped trigonal prism-like configurations while Mg atoms arrange themselves primarily in higher coordinated crystal-like and icosahedrallike polyhedrons. The mean coordination number of Mg and Si is estimated to be similar to 12.84 and similar to 8.2, respectively. Si-Si homopolar bonds are also presented in the amorphous network, in contrast to the crystal. Based on our findings, we propose that the amorphous model has a short-range order, quite different than that of the anti fluorite Mg2Si crystal but similar to that of metallic glasses. The different local structure of the amorphous state yields distinct electronic and mechanical properties, relative to the crystal. Within the known limitation of DFT-GGA simulations, the amorphous Mg2Si is found to be semimetal though the anti-fluorite structure is semiconductor. Furthermore, amorphous Mg2Si is predicted to be less brittle than the crystal structure. Since the potential use of the Mg2Si crystal as a biodegradable implant material is hindered because of its brittle behavior, here we propose that amorphous or nanoglass forms might eliminate this limitation of Mg2Si and hence it can serve as an implant material in near future.Article Citation - WoS: 1Citation - Scopus: 1Amorphous GaN: Polyamorphism and Crystallization at High Pressure(Elsevier, 2024-05) Durandurdu, MuratEmploying constant pressure ab initio simulations, we have shed light on the previously unknown high-pressure behavior of amorphous gallium nitride. Our findings reveal a two-step transformation sequence under pressure. The initial transition involves a polyamorphic transformation from a low-density amorphous (LDA) phase to a high-density amorphous (HDA) phase with an average coordination number of 5.4. Upon pressure release, the HDA state partially reverts to a denser amorphous network with a higher coordination number (4.34) compared to the original LDA phase. Further pressurization triggers the crystallization of the HDA state into a rocksalt structure. Remarkably, the electronic structure of the amorphous forms of GaN exhibits insignificant sensitivity to changes in coordination number, maintaining a band gap of approximately 1.7-2.0 eV across all phases.Article Citation - WoS: 3Citation - Scopus: 3Amorphous Carbon Nitride (C3N4)(Elsevier, 2024-05) Durandurdu, MuratThis detailed investigation employs an ab initio approach to explore the atomic structure and electronic properties of an amorphous carbon nitride (C3N4) model. The model, designed with an exact 3:4 ratio, is based on an amorphous boron nitride configuration. The study reveals crucial insights into the mean coordination number for C and N atoms within the amorphous structure. With values of 2.95 for C atoms and 2.21 for N atoms, these coordination numbers closely resemble those observed in graphite -like crystals. The local structure of the amorphous network exhibits similarities to the triazine-based graphitic C3N4 crystal and is notably devoid of homopolar bonds. The estimated band gap for the amorphous C3N4 model is 1.2 eV, representing a significant reduction compared to the crystal structure, which exhibits a band gap of about 2.93 eV as determined through GGA+U calculations.Article Citation - WoS: 2Citation - Scopus: 2Amorphous Boron Carbonitride (BC4N) From Ab Initio Simulations(Elsevier, 2024-09) Durandurdu, MuratThis study utilizes ab initio molecular dynamics simulations to explore the structure and properties of amorphous boron carbonitride (a-BC4N). A 432-atom model, generated via a conventional melt-and-quench technique, exhibits a graphite-like structure with all elements possessing an average coordination number of about 3.0. C atoms dominate within individual layers, interspersed with distinct BN domains. This atomic arrangement deviates considerably from that proposed for crystalline BC4N structures. Despite this structural variation, the aBC4N model is likely a narrow band gap semiconductor (0.15 eV), similar to its crystalline counterparts. In terms of mechanical properties, a-BC4N demonstrates similarities with various layered materials while exhibiting a notably larger bulk modulus.