Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
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Article Colloidal Photodetectors Based on Engineered Multishelled InP Based Quantum Dots(Institute of Physics, 2026-01-08) Akrema; Erol, E.; Savaş, M.; Yazici, A.; Erdem, T.; Mutlugün, E.; Faruk Yazıcı, AhmetIn this work, we present a straightforward and cost-effective approach to synthesize multi-shell InP/ZnSe/ZnSeS/ZnS quantum dots (QDs) that show promising potential for use in photodetectors. By carefully layering ZnSe, ZnSeS, and ZnS shells around an InP core, we were able to enhance the stability and optical performance of the QDs, achieving a narrow emission peak of 45 nm and a high photoluminescence quantum yield of 55%. These QDs were then integrated into simple photodetector devices, which possessed impressive sensitivity and detection capabilities. Specifically, our devices achieved a peak responsivity of 0.54 A W−1 and a detectivity of 2.22 × 1011 Jones at 400 nm with a 5 V bias. This study highlights the potential of InP-based QDs as a safer and more sustainable alternative to traditional QDs that contain toxic heavy metals, offering a viable path forward for developing high-performance optoelectronic devices. Our findings suggest that these InP/ZnSe/ZnSeS/ZnS QDs could be a key material for the next generation of high-performance optoelectronic devices, especially in applications that require highly sensitive and stable photodetectors. © 2026 The Author(s). Published by IOP Publishing Ltd.Conference Object Fully Flexible, Low-Cost, Environmentally Friendly Yarn-Based Inp/Ag Nw Photodetectors for UV-Visible Light Detection(SPIE, 2025-08-01) Savaş, M.; Akrema, A.; Ocal, S.K.; Erdem, T.We report the fabrication and investigate of a novel photodetector using a heterostructure of InP quantum dots (QDs) and silver nanowires (Ag NWs) incorporated into yarn. This device is simple, scalable, low-cost, flexible, and functions under ambient conditions. Ag NWs and red-emitting InP QDs were separately synthesized via chemical methods and mixed in a specific ratio to coat functional yarns, which were then knitted into fabrics. The photodetector benefits from the excellent electrical conductivity of Ag NWs and the strong optical absorption of InP QDs. It shows enhanced photoelectric response in both UV and visible regions. At 405 nm illumination, the device achieves a photoresponsivity of 5.8 mA W-1 and a detectivity of 2 × 1010 Jones-values comparable to or exceeding those of similar devices. The enhanced performance is attributed to efficient charge transfer enabled by favorable band alignment between Ag NWs and InP QDs, along with synergistic effects from nanostructure dimensionality and quantum confinement. The device's combination of flexibility, sensitivity, and cost-efficiency makes it a strong candidate for wearable UV-visible photodetectors. © 2025 SPIE. All rights reserved.Article Citation - WoS: 4Citation - Scopus: 3Multifaceted Effects of the Dielectric Component Within Plasmon-Assisted Light-Emitting Structures(American Chemical Society, 2025-10-23) Kulakovich, O.; Muravitskaya, A.; Ramanenka, A.; Efimova, T.; Krukov, V.; Mutlugün, E.; Gaponenko, S.Plasmon-enhanced photoluminescence of molecular probes and semiconductor nanocrystals is a rapidly developing field that promises enhanced sensitivity in chemical and biomedical analyses, as well as higher efficiency of light-emitting devices and single-photon sources. The dielectric component, or spacer, is typically used to control the distance between the emitter and the plasmonic nanoparticle in order to decrease undesirable nonradiative energy transfer to the metal and achieve high enhancement efficiency. While most research focuses on the shape and organization of the plasmonic nanoparticles, less attention is given to the role of the dielectric component in plasmon-enhancing structures. Meanwhile, the dielectric shell or environment critically modulates near-field enhancement, far-field scattering, charge and energy exchange between the emitter and the plasmonic structure, and the general environmental stability of the structure. In this review, we discuss all mentioned topics and therefore consider both the optical and chemical influence of the widely used spacers and dielectric layers on plasmon-enhanced photoluminescence efficiency. Investigating the role of individual components in plasmon-assisted light-emitting structures is critical for optimizing device performance and for advancing the integration of plasmonic architectures in optoelectronic and sensing applications. This review challenges the passive interpretation of dielectrics, revealing them as one of the key players in plasmonic structures, mediating field enhancement, emission dynamics, and chemical stability simultaneously. © 2025 American Chemical SocietyArticle Citation - WoS: 2Citation - Scopus: 1Toward Sustainable Optoelectronics: Solution-Processed Quantum Dot Photodetector Fabrication Using a Surgical Blade(SPIE - Society of Photo-Optical Instrumentation Engineers, 2023-02-13) Savas, Muzeyyen; Yazici, Ahmet Faruk; Arslan, Aysenur; Mutluguen, Evren; Erdem, Talha; Yazlcl, Ahmet Faruk; Mutlugün, EvrenFabrication of optoelectronic devices relies on expensive, energy-consuming conventional tools including chemical vapor deposition, lithography, and metal evaporation. Furthermore, the films used in these devices are usually deposited at elevated temperatures (> 300 degrees C) and under high vacuum, which necessitate further restrictions on the device fabrication. Developing an alternative technology would contribute to the efforts on achieving a sustainable optoelectronics technology. Keeping this in our focus, here we present a simple technique to fabricate visible photodetectors (PDs). These fully solution-processed and transparent metal-semiconductor-metal (MSM) PDs employ silver nanowires (Ag NW) as the transparent electrodes replacing the indium-tin-oxide (ITO) commonly used in optoelectronic devices. By repeatedly spin coating Ag NWs on a glass substrate followed by the coating of zinc oxide nanoparticles, we obtained a highly conductive transparent electrode reaching a sheet resistance of 95 omega/? as measured by the four-probe method. Optical spectroscopy revealed that the transmittance of the Ag NW-ZnO films was 84% at 450 nm while the transmittance of the ITO films was 90% at the same wavelength. Following the formation of the conductive film, we scratched it using a heated surgical blade to open a gap. The scanning electron microscope images indicate that a gap of similar to 30 mu m is opened forming an insulating line. As the active layer, we drop-casted red-emitting CdSe/ZnS core-shell quantum dots (QDs) onto this gap to form a MSM PD. These visible QD-based PDs exhibited responsivities and detectivities up to 8.5 mA/W and 0.95 x 109 Jones, respectively at a bias voltage of 5 V and wavelength of 650 nm. These proof-of-concept PDs show that the environmentally friendly, low-cost, and energy-saving technique presented here can be an alternative to conventional, high-cost, and energy-hungry techniques while fabricating photoconductive devices.