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Scopus İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395

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Author: search.filters.author.Soheyli, EhsanPublisher: search.filters.publisher.Amer Chemical Soc

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Now showing 1 - 4 of 4
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Fully Inorganic Colloidal CsPbBr3 Perovskite Nanocrystals with Zn-Doping and Metal Oxide Encapsulation for Luminescent Display Panels
    (Amer Chemical Soc, 2025-11-07) Khorasani, Azam; Soheyli, Ehsan; Mutlugun, Evren
    Perovskite nanocrystals (PeNCs) are emerging as exceptional materials due to their high photoluminescence quantum yield, tunable bandgap, and excellent charge carrier mobility, enabling a wide range of colors and promising applications in optoelectronics and photovoltaics. Despite their advantages, PeNCs face stability challenges caused by environmental factors. In the presented study, a facile and versatile colloidal hot-injection method was used to apply the beneficial aspects of Zn-doping in cesium lead bromide (CsPbBr3) PeNCs. The uniform platelet-shaped Zn-doped CsPbBr3 PeNCs were prepared by doping with a 0.1 molar ratio of zinc-oleate solution in the perovskite precursors during synthesis. Then, zinc-oxide (ZnO) and nickel-oxide (NiO) coating layers were utilized separately to effectively reduce surface defects, encapsulate PeNCs, and improve their stability issues. To fabricate the coated PeNCs with metal oxides, zinc acetate and nickel(II) acetate tetrahydrate solutions were prepared individually and added to the crude perovskite solutions. The quantum yield of Zn-doped CsPbBr3 (CsPb1-xZnxBr3) PeNCs coated with ZnO increased from 50% for bare CsPbBr3 to over 84%, while NiO-coated PeNCs exhibited a higher yield of 90% both of which remarkably enhanced the emission stability. Moreover, NiO coatings represented a proper protection against surface imperfections and improved resistance to external stimuli. The combination of facile/effective preparation method, excellent emission efficiency, and reliable emission stability nominates the prepared colloidal composite for display pixels, detectors, and lasers.
  • Article
    Citation - WoS: 15
    Citation - Scopus: 14
    Tuning the Shades of Red Emission in InP/ZnSe Nanocrystals With Narrow Full Width for Fabrication of Light-Emitting Diodes
    (Amer Chemical Soc, 2023-10-13) Soheyli, Ehsan; Bicer, Aysenur; Ozel, Sultan Suleyman; Tiras, Kevser Sahin; Mutlugun, Evren; Sahin Tiras, Kevser
    While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris-(dimethyl-amino)-phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626-670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50-70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m(-2), and a current efficiency of 0.88 cd A(-1).
  • Article
    Citation - WoS: 20
    Citation - Scopus: 19
    Spectrally Tunable White Light-Emitting Diodes Based on Carbon Quantum Dot-Doped Poly(N-Vinylcarbazole) Composites
    (Amer Chemical Soc, 2024-01-26) Sahin Tiras, Kevser; Bicer, Aysenur; Soheyli, Ehsan; Mutlugun, Evren
    Electroluminescent white light-emitting diodes (WLEDs) are always of great interest for emerging display applications. Carbon-based quantum dots (CQDs) are the newest emerging nanoscale materials that can be employed for this purpose, owing to their broad and bright light emission properties. In the present work, highly luminescent CQDs with an emission quantum yield of 60% were prepared via a colloidal solvothermal method and subsequent silica gel column chromatography. The photoluminescence (PL) peak was located at 550 nm possessing yellow emission, with a full width at half-maximum of 98 nm and a relatively long lifetime of 10.23 ns through a single-exponential recombination pathway. CQDs were employed in an electroluminescent device architecture of an ITO/PEDOT:PSS/TFB/CQD:PVK/TPBi/LiF/Al structure and blended with poly(N-vinylcarbazole) (PVK) to evaluate their ability to reach white electroluminescent emission. Results confirmed a high external quantum efficiency (EQE) of 0.76% and a maximum luminescence of 774.3 cd<middle dot>m(-2). Tuning the ratio between CQDs and PVK from 1:10.25 to 1:5.75 resulted in a systematic shift in CIE x-y coordinates from 0.23-0.26 to 0.21-0.24, located close to the cool white region. The results of the present study can be considered a step forward in fabricating efficient WLEDs based on low-cost CQDs.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 14
    Nanowire-Shaped MoS2@MoO3 Nanocomposites as a Hole Injection Layer for Quantum Dot Light-Emitting Diodes
    (Amer Chemical Soc, 2022-08-01) Bastami, Nasim; Soheyli, Ehsan; Arslan, Aysenur; Sahraei, Reza; Yazici, Ahmet Faruk; Mutlugun, Evren
    Molybdenum disulfides and molybdenum trioxides are structures that possess the potential to work as efficient charge transport layers in optoelectronic devices. In the present study, as opposed to the existing Mo-based nanostructures in flake, sheet, or spherical forms, an extremely simple and low-cost hydrothermal method is used to prepare nanowires (NWs) of MoS2@MoO3 (MSO) composites. The synthesis method includes several advantages including easy handling and processing of inexpensive precursors to reach stable MSO NWs without the need for an oxygen-free medium, which would facilitate the possibility of mass production of these nanostructures. The structural analysis confirmed the formation of MSO nanocomposites with different Mo valence states, as well as NWs of average length and diameter of 70 nm and 5 nm, respectively. In order to demonstrate their potential for optoelectronic applications, MSO NWs were blended into hole injection layers (HILs) in quantum dot-based light emitting diodes (QLEDs). Electroluminescence measurements show a substantial enhancement in both luminance (from 44,330 to 68,630 cd.m-2) and external quantum efficiency (from 1.6 to 2.3%), based on the increase in the ratio of MSO NWs from 3 to 10%. Interestingly, the addition of 10% volume of MSO NWs resulted in a remarkably smoother HIL with improved current efficiency and stability in green-emitting QLEDs. The simplicity and cost-effective features of the synthesis method along with outstanding favorable morphology demonstrated their ability to enhance the QLED performance and mark them as promising agents for optoelectronics.