Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
Browse
3 results
Search Results
Article Citation - WoS: 128Citation - Scopus: 136Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth(Wiley-VCH Verlag GmbH, 2019-12-23) Liu, Baiquan; Altintas, Yemliha; Wang, Lin; Shendre, Sushant; Sharma, Manoj; Sun, Handong; Demir, Hilmi VolkanColloidal quantum wells (CQWs) are regarded as a highly promising class of optoelectronic materials, thanks to their unique excitonic characteristics of high extinction coefficients and ultranarrow emission bandwidths. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind other types of soft-material LEDs (e.g., organic LEDs, colloidal-quantum-dot LEDs, and perovskite LEDs). Herein, high-efficiency CQW-LEDs reaching close to the theoretical limit are reported. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films, and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition-, and device-engineering, the CQW-LEDs using CdSe/Cd0.25Zn0.75S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23 490 cd m(-2), extremely saturated red color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.715, 0.283), and stable emission are obtained. The findings indicate that HIS-grown CQWs enable high-performance solution-processed LEDs, which may pave the path for future CQW-based display and lighting technologies.Article Citation - WoS: 31Citation - Scopus: 32Low-Threshold Lasing From Copper-Doped CDSE Colloidal Quantum Wells(Wiley-VCH Verlag GmbH, 2021-05-04) Yu, Junhong; Sharma, Manoj; Li, Mingjie; Delikanli, Savas; Sharma, Ashma; Taimoor, Muhammad; Dang, CuongTransition metal doped colloidal nanomaterials (TMDCNMs) have recently attracted attention as promising nano-emitters due to dopant-induced properties. However, despite ample investigations on the steady-state and dynamic spectroscopy of TMDCNMs, experimental understandings of their performance in stimulated emission regimes are still elusive. Here, the optical gain properties of copper-doped CdSe colloidal quantum wells (CQWs) are systemically studied with a wide range of dopant concentration for the first time. This work demonstrates that the amplified spontaneous emission (ASE) threshold in copper-doped CQWs is a competing result between the biexciton formation, which is preferred to achieve population inversion, and the hole trapping which stymies the population inversion. An optimum amount of copper dopants enables the lowest ASE threshold of approximate to 7 mu J cm(-2), about 8-fold reduction from that in undoped CQWs (approximate to 58 mu J cm(-2)) under sub-nanosecond pulse excitation. Finally, a copper-doped CQW film embedded in a vertical cavity surface-emitting laser (VCSEL) structure yields an ultralow lasing threshold of 4.1 mu J cm(-2). Exploiting optical gain from TMDCNMs may help to further boost the performance of colloidal-based lasers.Article Citation - WoS: 16Citation - Scopus: 17Efficient Generation of Emissive Many-Body Correlations in Copper-Doped Colloidal Quantum Wells(Cell Press, 2022-09) Yu, Junhong; Sharma, Manoj; Li, Mingjie; Liu, Baiquan; Hernandez-Martinez, Pedro Ludwig; Delikanli, Savas; Dang, CuongColloidal quantum wells (CQWs) provide an appealing platform to achieve emissive many-body correlations for novel optoelectronic devices, given that they act as hosts for strong carrier Coulomb interactions and present suppressed Auger recombination. However, the demonstrated high-order excitonic emission in CQWs requires ultrafast pumping with high excitation levels and can only be spec-trally resolved at the single-particle level under cryogenic condi-tions. Here, through systematic investigation using static power -dependent emission spectroscopy and transient carrier dynamics, we show that Cu-doped CdSe CQWs exhibit continuous-wave -pumped high-order excitonic emission at room temperature with a large binding energy of X64 meV. We attribute this unique behavior to dopant excitons in which the ultralong lifetime and the highly localized wavefunction facilitate the formation of many-body corre-lations. The spectrally resolved high-order excitonic emission gener-ated at power levels compatible with solar irradiation and electrical injection might pave the way for novel solution-processed solid-state devices.