Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395
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Article Citation - WoS: 124Citation - Scopus: 127Molecular Engineering of Organic Semiconductors Enables Noble Metal-Comparable SERS Enhancement and Sensitivity(Nature Publishing Group, 2019-12-03) Demirel, Gokhan; Gieseking, Rebecca L. M.; Ozdemir, Resul; Kahmann, Simon; Loi, Maria A.; Schatz, George C.; Usta, HakanNanostructured molecular semiconductor films are promising Surface-Enhanced Raman Spectroscopy (SERS) platforms for both fundamental and technological research. Here, we report that a nanostructured film of the small molecule DFP-4T, consisting of a fully pi-conjugated diperfluorophenyl-substituted quaterthiophene structure, demonstrates a very large Raman enhancement factor (>10(5)) and a low limit of detection (10(-9) M) for the methylene blue probe molecule. This data is comparable to those reported for the best inorganic semiconductor- and even intrinsic plasmonic metal-based SERS platforms. Photoluminescence spectroscopy and computational analysis suggest that both charge-transfer energy and effective molecular interactions, leading to a small but non-zero oscillator strength in the charge-transfer state between the organic semiconductor film and the analyte molecule, are required to achieve large SERS enhancement factors and high molecular sensitivities in these systems. Our results provide not only a considerable experimental advancement in organic SERS figure-of-merits but also a guidance for the molecular design of more sensitive SERS systems.Article Citation - WoS: 13Citation - Scopus: 15Meso-π-extended/Deficient BODIPYs and Low-Band Donor-Acceptor Copolymers for Organic Optoelectronics(Amer Chemical Soc, 2022-02-16) Can, Ayse; Choi, Gi-Seok; Ozdemir, Resul; Park, Soyoon; Park, Jin Su; Lee, Yongchul; Usta, HakanThe realization of pi-deficient acceptors and their donor-acceptor copolymers has become a key research focus for the realization of versatile organic optoelectronic materials and devices. Herein, we demonstrate the theoretical design, synthesis, and physicochemical/optoelectronic characterization of two meso-pi-extended/deficient BODIPY building blocks (2OD-T2BDY and 2OD-TTzBDY) and a library of donor-acceptor copolymers with low band gap (E-g = 1.30-1.35 eV) based on these building blocks. These building blocks, to the best of our knowledge, are the first examples of BODIPYs with meso-pi-extension. A library of BODIPY building blocks with varied meso units/substituents is studied to reveal the meso effects on the semiconducting BODIPY's optoelectronic properties. The building blocks showed favorable pi-acceptor electronic/structural properties with meso-pi-delocalized and stabilized LUMOs (ca. -3.6 eV) and large ground-state dipole moments of 4.9-5.5 D. Consistent with the theoretical/experimental pi-electronic structures, all copolymers functioned as p-type semiconductors in field-effect transistors and as donor materials in the bulk heterojunction organic photovoltaics. Power conversion efficiencies of up to 4.4% with a short-circuit current of 12.07 mA cm(-2) were achieved. This study demonstrates a unique meso-pi-extension strategy to realize BODIPYs with favorable pi-acceptor properties, and our findings could open up future materials design avenues in various organic optoelectronic applications.Article Citation - WoS: 10Citation - Scopus: 11Interplay Between Charge Injection, Electron Transport, and Quantum Efficiency in Ambipolar Trilayer Organic Light-Emitting Transistors(Wiley, 2022-01-15) Moschetto, Salvatore; Benvenuti, Emilia; Usta, Hakan; Ozdemir, Resul; Facchetti, Antonio; Muccini, Michele; Toffanin, StefanoThe fascinating characteristic of organic light-emitting transistors (OLETs) of being electrical switches with an intrinsic light-emitting capability makes them attractive candidates for a wide variety of applications, ranging from sensors to displays. To date, the OLET ambipolar trilayer heterostructure is the most developed architecture for maximizing device performance. However, a major challenge of trilayer OLETs remains the inverse correlation between external quantum efficiency and brightness under ambipolar conditions. The complex interconnection between electroluminescent and ambipolar charge transport properties, in conjunction with the limited availability of electron transport semiconducting materials, has indeed hampered the disruptive evolution of the OLET technology. Here, an in-depth study of the interplay of the key fundamental features that determine the device performance is reported by exploring electron transport semiconductors with different properties in ambipolar trilayer OLETs. Through the selection of compounds with tailored chemical structures, the relation between intrinsic optoelectronic characteristics of the electron transport semiconductor, energy level alignment within the structure, and morphological features is unraveled. Furthermore, the introduction of a suitable electron injector at the emissive/semiconducting layers interface sheds light into the bidimensional nature of OLETs that is a distinguishing factor of this class of devices with respect to prototypical organic light-emitting diodes.Article Citation - WoS: 39Citation - Scopus: 37A Dopant-Free 2,7-Dioctyl[1]Benzothieno[3,2 (C8-BTBT) Hole Transporting Layer for Highly Stable Perovskite Solar Cells With Efficiency Over 22%(Royal Soc Chemistry, 2022) Kaya, Ismail Cihan; Ozdemir, Resul; Usta, Hakan; Sonmezoglu, SavasIn this study, for the first time, n-i-p PSCs were fabricated using dopant-free 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as the solution-processed hole transporting layer (HTL). The power conversion efficiency (PCE) of the optimized device with the C8-BTBT film that favored edge-on molecular alignment was 22.45% with negligible hysteresis. A thinner dopant-free C8-BTBT HTL effectively protected the perovskite layer from moisture resulting in better shelf-life stability for un-encapsulated PSCs, which maintained >80% of its initial PCE (after a period of 120 days) at a relative humidity level of 40-45%. In addition, the C8-BTBT-based PSCs kept their high performance with no obvious PCE loss at 60 degrees C for 20 days in the ambient atmosphere and retained 82% of their initial PCE at 85 degrees C for 10 days. Overall, our findings revealed that a thin solution-processed C8-BTBT HTL plays a critical role not only in hole extraction and transport but also in greatly improving the ambient and thermal stability of n-i-p PSCs.