Scopus İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/395

Browse

Search Results

Now showing 1 - 3 of 3
  • Article
    Citation - WoS: 25
    Citation - Scopus: 25
    Triisopropylsilylethynyl-Substituted Indenofluorenes: Carbonyl Versus Dicyanovinylene Functionalization in One-Dimensional Molecular Crystals and Solution-Processed N-Channel Ofets
    (Royal Soc Chemistry, 2018) Ozdemir, Resul; Park, Sangyun; Deneme, Ibrahim; Park, Yonghan; Zorlu, Yunus; Alidagi, Husniye Ardic; Usta, Hakan
    The design and synthesis of novel electron-deficient and solution-processable polycyclic aromatic hydrocarbons offers great opportunities for the development of low-cost and large-area (opto)electronics. Although (trialkylsilyl)ethynyl (R3Si-C?C-) has emerged as a very popular unit to solubilize organic semiconductors, it has been applied only to a limited class of materials that are mostly substituted on short molecular axes. Herein, two novel solution-processable indenofluorene-based semiconductors, TIPS-IFDK and TIPS-IFDM, bearing (triisopropylsilyl)ethynyl end units at 2,8-positions (long molecular axis substitution) were synthesized, and their single-crystal structures, optoelectronic properties, solution-sheared thin-film morphologies/microstructures, and n-channel field-effect responses were studied. In accordance with the DFT calculations, the HOMO/LUMO energies of the new compounds are found to be -5.77/-3.65 eV and -5.84/-4.18 eV for TIPS-IFDK and TIPS-IFDM, respectively, reflecting the high electron deficiency of the new -backbones. Both semiconductors exhibit slightly S-shaped molecular frameworks with highly coplanar IFDK/IFDM -cores, and they form slipped -stacked one-dimensional (1-D) columnar motifs in the solid state. However, substantial differences in the degree of - interactions and stacking distances (4.04 angstrom vs. 3.47 angstrom) were observed between TIPS-IFDK and TIPS-IFDM as a result of carbonyl vs. dicyanovinylene functionalization, which results in a three orders of magnitude variation in the charge carrier mobility of the corresponding thin films. Top-contact/bottom-gate OFETs fabricated via solution-shearing TIPS-IFDM yielded one of the best performances in the (trialkylsilyl)ethynyl literature ((e) = 0.02 cm(2) V-1 s(-1), I-on/I-off = 10(7)-10(8), and V-T approximate to 2 V under ambient atmosphere) for a 1-D polycrystalline semiconductor microstructure. To the best of our knowledge, the molecules presented here are the first examples of n-type semiconductors substituted with (trialkylsilyl)ethynyl groups on their long molecular axes.
  • Article
    Citation - WoS: 18
    Citation - Scopus: 18
    The Hansen Solubility Approach Towards Green Solvent Processing: N-Channel Organic Field-Effect Transistors Under Ambient Conditions
    (Royal Soc Chemistry, 2024) Deneme, Ibrahim; Yildiz, Tevhide Ayca; Kayaci, Nilgun; Usta, Hakan
    The adoption of green solvents is of utmost importance for the solution-based fabrication of semiconductor thin films and for the commercialization of (opto)electronic devices, especially in response to evolving regulatory mandates for handling organic materials. Despite the increasing interest in this area, the scarcity of green solvent-processed n-channel OFETs, especially functioning under ambient conditions, highlights the need for further research. In this study, we demonstrated the Hansen solubility approach to study the solubility behavior of an ambient-stable n-type semiconductor, 2,2' -(2,8-bis(3-dodecylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile (beta,beta'-C-12-TIFDMT), and to analyze potential green solvents for thin-film processing. The Hansen solubility parameters were determined to be delta(D) = 20.8 MPa1/2, delta(P) = 5.8 MPa1/2, and delta(H) = 5.5 MPa1/2 with a radius (R-0) of 8.3 MPa1/2. A green solvent screening analysis based on the minimal distance constraint and quantitative sustainability score identified ethoxybenzene, anisole, 2-methylanisole, and 2-methyltetrahydrofuran as suitable green solvents (R-a's = 5.17-7.93 MPa1/2 < R-0). A strong thermodynamic correlation was identified between the solubility and the semiconductor-solvent distance in the 3D Hansen solubility space, in which the maximum solubility limit could be estimated with the enthalpy of fusion (Delta H-fus) and melting temperature (T-mp) of the semiconductor. To the best of our knowledge, this relationship between the maximum solubility limit and thermal properties has been established for the first time for organic semiconductors. Bottom-gate/top-contact OFETs fabricated by spin-coating the semiconductor green solutions exhibited mu es reaching similar to 0.2 cm(2) V-1 s(-1) (I-on/I-off similar to 10(6)-10(7) and V-on similar to 0-5 V) under ambient conditions. This device performance, to our knowledge, is the highest reported for an ambient-stable green solvent-processed n-channel OFET. Our HSP-based rational approach and unique findings presented in this study can shed critical light on how green solvents can be efficiently incorporated in solution processing in organic (opto)electronics, and whether ambient-stable n-type semiconductors can continue to play an important role in green OFETs.
  • Article
    Citation - WoS: 16
    Citation - Scopus: 15
    Engineering Functionalized Low LUMO [1]Benzothieno[3,2-B][1]Benzothiophenes (BTBTs): Unusual Molecular and Charge Transport Properties
    (Royal Soc Chemistry, 2020) Ozdemir, Resul; Ahn, Kyunghan; Deneme, Ibrahim; Zorlu, Yunus; Kim, Dojun; Kim, Myung-Gil; Usta, Hakan
    Diacene-fused thienothiophenes (DAcTTs) have provided an excellent pi-framework for the development of high mobility p-type molecular semiconductors in the past decade. However, n-type DAcTTs are rare and their electron transport characteristics remain largely unexplored. Herein, a series of functionalized low LUMO (lowest unoccupied molecular orbital) [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based small molecules, D(C7CO)-BTBT, C7CO-BTBT-CC(CN)(2)C-7, and D(C7CC(CN)(2))-BTBT, have been developed. Detailed structural, physicochemical, optoelectronic, and single-crystal characterization were performed. The new molecules exhibit large optical band gaps (similar to 2.8-3.1 eV) and highly stabilized (-Delta E-LUMO = 1.2-1.4 eV)/pi-delocalized LUMOs as compared to p-type DAcTTs. Symmetric functionalization is found to be important to enable strong intermolecular interactions in the solid-state. All molecules exhibit alternately stacked layers of "F-BTBT-F" and "S" (F: functional group/S: substituent) with strong herringbone-like interactions (2.8-3.6 angstrom distances) between pi-cores. While carbonyls, regardless of the substituent, adopt nearly coplanar pi-backbones with BTBT, dicyanovinylenes are found to be twisted (47.5 degrees). The conformational difference at the molecular level has unusual effects on the pi-electron deficiencies, frontier molecular orbital energetics, thermal/photophysical properties, and pi-electronic structures. Dicyanovinylenes at the 2,7 positions, despite twisted conformations, are shown for the first time to yield good electron transport in DAcTTs. The D(C7CC(CN)(2))-BTBT thin film exhibits large 2D plate-like crystalline grains (similar to 1-2 mu m sizes) of terraced islands and becomes a rare example of an n-type DAcTT in organic field-effect transistors (OFETs). Although a stabilized/pi-delocalized LUMO, largely governed by functional groups and intramolecular twists, is essential for electron transport, our findings suggest that it should be combined with proper substituents to yield a favorable three-dimensional BTBT/functional group pi-electronic structure and a low intramolecular reorganization energy. Combined with our first n-type DAcTT semiconductor D(PhFCO)-BTBT, a molecular library with systematically varied chemical structures has been studied herein for the first time for low LUMO DAcTTs. The molecular engineering perspectives presented in this study may give unique insights into the design of novel electron transporting thienoacenes for unconventional optoelectronics.