WoS İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394

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Author: search.filters.author.Altintas, YemlihaSubject: search.filters.subject.Stability

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  • Article
    Citation - WoS: 88
    Citation - Scopus: 85
    Highly Stable, Near-Unity Efficiency Atomically Flat Semiconductor Nanocrystals of CdSe/ZnS Hetero-Nanoplatelets Enabled by ZnS-Shell Hot-Injection Growth
    (Wiley-VCH Verlag GmbH, 2019-01-30) Altintas, Yemliha; Quliyeva, Ulviyya; Gungor, Kivanc; Erdem, Onur; Kelestemur, Yusuf; Mutlugun, Evren; Demir, Hilmi Volkan
    Colloidal semiconductor nanoplatelets (NPLs) offer important benefits in nanocrystal optoelectronics with their unique excitonic properties. For NPLs, colloidal atomic layer deposition (c-ALD) provides the ability to produce their core/shell heterostructures. However, as c-ALD takes place at room temperature, this technique allows for only limited stability and low quantum yield. Here, highly stable, near-unity efficiency CdSe/ZnS NPLs are shown using hot-injection (HI) shell growth performed at 573 K, enabling routinely reproducible quantum yields up to 98%. These CdSe/ZnS HI-shell hetero-NPLs fully recover their initial photoluminescence (PL) intensity in solution after a heating cycle from 300 to 525 K under inert gas atmosphere, and their solid films exhibit 100% recovery of their initial PL intensity after a heating cycle up to 400 K under ambient atmosphere, by far outperforming the control group of c-ALD shell-coated CdSe/ZnS NPLs, which can sustain only 20% of their PL. In optical gain measurements, these core/HI-shell NPLs exhibit ultralow gain thresholds reaching approximate to 7 mu J cm(-2). Despite being annealed at 500 K, these ZnS-HI-shell NPLs possess low gain thresholds as small as 25 mu J cm(-2). These findings indicate that the proposed 573 K HI-shell-grown CdSe/ZnS NPLs hold great promise for extraordinarily high performance in nanocrystal optoelectronics.
  • Article
    Citation - WoS: 138
    Citation - Scopus: 146
    Cesium-Lead Based Inorganic Perovskite Quantum-Dots as Interfacial Layer for Highly Stable Perovskite Solar Cells With Exceeding 21% Efficiency
    (Elsevier, 2019-06) Akin, Seckin; Altintas, Yemliha; Mutlugun, Evren; Sonmezoglu, Savas
    Despite the excellent photovoltaic performances of perovskite solar cells (PSCs), the instability of PSCs under severe environment (e.g. humidity, light-induced, etc.) limits further commercialization of such devices. Therefore, in recent years, research on the long-term stability improvement of PSCs has been actively carried out in perovskite field. To address these issues, we demonstrated the incorporation of ultra-thin interfacial layer of inorganic CsPbBr1.85I1.15 perovskite quantum-dots (PQDs) that can effectively passivate defects at or near to the perovskite/hole transport material (HTM) interface, significantly suppressing interfacial recombination. This passivation layer increased the open circuit voltage (V-oc) of triple-cation perovskite cells by as much as 50 mV, with champion cells achieving V-oc similar to 1.14 V. As a result, we obtained hysteresis-free cells with the efficiency beyond 21%. More importantly, devices based on such architecture are capable of resisting humidity and light-induced. Remarkably, the device employing CsPbBr1.85I1.15 demonstrated a superb shelf-stability aganist to humidity under ambient conditions (R.H. >= 40%), retaining nearly 91% of initial efficiency after 30 days, while the efficiency of control device rapidly dropped to 45% from its initial value under the same conditions. Besides benefiting from the high moisture resistivity as well as supressed ion migration, PSC5 based on PQDs showed better operational stability (retaining 94% of their initial performance) than that of the PQDs-free one under continuous light irradiation over 400 h. In addition, a faster PL decay time of 4.66 ns was attained for perovskite/PQDs structure (5.77 ns for only PQDs structure) due to the favorable energy transfer at the interface, indicating a Forster resonance energy transfer (FRET) mechanism. This work indicates that inorganic PQDs are important materials as interlayer in PSC5 to supremely enhance the device stability and efficiency.