PubMed İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/397
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Article Citation - WoS: 128Citation - Scopus: 136Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth(Wiley-VCH Verlag GmbH, 2019-12-23) Liu, Baiquan; Altintas, Yemliha; Wang, Lin; Shendre, Sushant; Sharma, Manoj; Sun, Handong; Demir, Hilmi VolkanColloidal quantum wells (CQWs) are regarded as a highly promising class of optoelectronic materials, thanks to their unique excitonic characteristics of high extinction coefficients and ultranarrow emission bandwidths. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind other types of soft-material LEDs (e.g., organic LEDs, colloidal-quantum-dot LEDs, and perovskite LEDs). Herein, high-efficiency CQW-LEDs reaching close to the theoretical limit are reported. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films, and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition-, and device-engineering, the CQW-LEDs using CdSe/Cd0.25Zn0.75S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23 490 cd m(-2), extremely saturated red color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.715, 0.283), and stable emission are obtained. The findings indicate that HIS-grown CQWs enable high-performance solution-processed LEDs, which may pave the path for future CQW-based display and lighting technologies.Article Citation - WoS: 11Citation - Scopus: 12Optical Gain in Ultrathin Self-Assembled Bi-Layers of Colloidal Quantum Wells Enabled by the Mode Confinement in Their High-Index Dielectric Waveguides(Wiley-VCH Verlag GmbH, 2020-10-20) Foroutan-Barenji, Sina; Erdem, Onur; Gheshlaghi, Negar; Altintas, Yemliha; Demir, Hilmi VolkanThis study demonstrates an ultra-thin colloidal gain medium consisting of bi-layers of colloidal quantum wells (CQWs) with a total film thickness of 14 nm integrated with high-index dielectrics. To achieve optical gain from such an ultra-thin nanocrystal film, hybrid waveguide structures partly composed of self-assembled layers of CQWs and partly high-index dielectric material are developed and shown: in asymmetric waveguide architecture employing one thin film of dielectric underneath CQWs and in the case of quasi-symmetric waveguide with a pair of dielectric films sandwiching CQWs. Numerical modeling indicates that the modal confinement factor of ultra-thin CQW films is enhanced in the presence of the adjacent dielectric layers significantly. The active slabs of these CQW monolayers in the proposed waveguide structure are constructed with great care to obtain near-unity surface coverage, which increases the density of active particles, and to reduce the surface roughness to sub-nm scale, which decreases the scattering losses. The excitation and propagation of amplified spontaneous emission (ASE) along these active waveguides are experimentally demonstrated and numerically analyzed. The findings of this work offer possibilities for the realization of ultra-thin electrically driven colloidal laser devices, providing critical advantages including single-mode lasing and high electrical conduction.Article Citation - WoS: 13Citation - Scopus: 14Near-Field Energy Transfer Into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors(Wiley-VCH Verlag GmbH, 2021-09-12) Humayun, Muhammad Hamza; Hernandez-Martinez, Pedro Ludwig; Gheshlaghi, Negar; Erdem, Onur; Altintas, Yemliha; Shabani, Farzan; Demir, Hilmi VolkanSilicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Forster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al2O3) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d(-1) with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.Article Citation - WoS: 88Citation - Scopus: 85Highly Stable, Near-Unity Efficiency Atomically Flat Semiconductor Nanocrystals of CdSe/ZnS Hetero-Nanoplatelets Enabled by ZnS-Shell Hot-Injection Growth(Wiley-VCH Verlag GmbH, 2019-01-30) Altintas, Yemliha; Quliyeva, Ulviyya; Gungor, Kivanc; Erdem, Onur; Kelestemur, Yusuf; Mutlugun, Evren; Demir, Hilmi VolkanColloidal semiconductor nanoplatelets (NPLs) offer important benefits in nanocrystal optoelectronics with their unique excitonic properties. For NPLs, colloidal atomic layer deposition (c-ALD) provides the ability to produce their core/shell heterostructures. However, as c-ALD takes place at room temperature, this technique allows for only limited stability and low quantum yield. Here, highly stable, near-unity efficiency CdSe/ZnS NPLs are shown using hot-injection (HI) shell growth performed at 573 K, enabling routinely reproducible quantum yields up to 98%. These CdSe/ZnS HI-shell hetero-NPLs fully recover their initial photoluminescence (PL) intensity in solution after a heating cycle from 300 to 525 K under inert gas atmosphere, and their solid films exhibit 100% recovery of their initial PL intensity after a heating cycle up to 400 K under ambient atmosphere, by far outperforming the control group of c-ALD shell-coated CdSe/ZnS NPLs, which can sustain only 20% of their PL. In optical gain measurements, these core/HI-shell NPLs exhibit ultralow gain thresholds reaching approximate to 7 mu J cm(-2). Despite being annealed at 500 K, these ZnS-HI-shell NPLs possess low gain thresholds as small as 25 mu J cm(-2). These findings indicate that the proposed 573 K HI-shell-grown CdSe/ZnS NPLs hold great promise for extraordinarily high performance in nanocrystal optoelectronics.Article Citation - WoS: 34Citation - Scopus: 33Deep-Red Colloidal Quantum Well Light-Emitting Diodes Enabled Through a Complex Design of Core/Crown Shell Heterostructure(Wiley-VCH Verlag GmbH, 2021-12-10) Shabani, Farzan; Dehghanpour Baruj, Hamed; Yurdakul, Iklim; Delikanli, Savas; Gheshlaghi, Negar; Isik, Furkan; Demir, Hilmi VolkanExtending the emission peak wavelength of quasi-2D colloidal quantum wells has been an important quest to fully exploit the potential of these materials, which has not been possible due to the complications arising from the partial dissolution and recrystallization during growth to date. Here, the synthetic pathway of (CdSe/CdS)@(1-4 CdS/CdZnS) (core/crown)@(colloidal atomic layer deposition shell/hot injection shell) hetero-nanoplatelets (NPLs) using multiple techniques, which together enable highly efficient emission beyond 700 nm in the deep-red region, is proposed and demonstrated. Given the challenges of using conventional hot injection procedure, a method that allows to obtain sufficiently thick and passivated NPLs as the seeds is developed. Consequently, through the final hot injection shell coating, thick NPLs with superior optical properties including a high photoluminescence quantum yield of 88% are achieved. These NPLs emitting at 701 nm exhibit a full-width-at-half-maximum of 26 nm, enabled by the successfully maintained quasi-2D shape and minimum defects of the resulting heterostructure. The deep-red light-emitting diode (LED) device fabricated with these NPLs has shown to yield a high external quantum efficiency of 6.8% at 701 nm, which is on par with other types of LEDs in this spectral range.