Browsing by Author "Humayun, Muhammad Hamza"

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Citation - WoS: 25
Citation - Scopus: 25
Self-Resonant Microlasers of Colloidal Quantum Wells Constructed by Direct Deep Patterning
(Amer Chemical Soc, 2021) Gheshlaghi, Negar; Foroutan-Barenji, Sina; Erdem, Onur; Altintas, Yemliha; Shabani, Farzan; Humayun, Muhammad Hamza; Demir, Hilmi Volkan
Here, the first account of self-resonant fully colloidal mu-lasers made from colloidal quantum well (CQW) solution is reported. A deep patterning technique is developed to fabricate well-defined high aspect-ratio on-chip CQW resonators made of grating waveguides and in-plane reflectors. The fabricated waveguide-coupled laser, enabling tight optical confinement, assures in-plane lasing. CQWs of the patterned layers are closed-packed with sharp edges and residual-free lifted-off surfaces. Additionally, the method is successfully applied to various nanoparticles including colloidal quantum dots and metal nanoparticles. It is observed that the patterning process does not affect the nanocrystals (NCs) immobilized in the attained patterns and the different physical and chemical properties of the NCs remain pristine. Thanks to the deep patterning capability of the proposed method, patterns of NCs with subwavelength lateral feature sizes and micron-scale heights can possibly be fabricated in high aspect ratios.
Citation - WoS: 13
Citation - Scopus: 14
Near-Field Energy Transfer Into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors
(Wiley-VCH Verlag GmbH, 2021) Humayun, Muhammad Hamza; Hernandez-Martinez, Pedro Ludwig; Gheshlaghi, Negar; Erdem, Onur; Altintas, Yemliha; Shabani, Farzan; Demir, Hilmi Volkan
Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Forster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al2O3) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d(-1) with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.