WoS İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394

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Now showing 1 - 5 of 5
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Quenchable Amorphous Diamond: A Novel High-Pressure Route to Tetrahedral Amorphous Carbon
    (Wiley-VCH Verlag GmbH, 2025-05-03) Durandurdu, Murat
    This study presents a groundbreaking theoretical prediction: the high-pressure transformation of amorphous graphite into a high-fraction sp3-bonded amorphous diamond phase. Employing ab initio molecular dynamics simulations, it is demonstrated that under extreme pressures, amorphous graphite undergoes an irreversible transition to an amorphous diamond phase. Thermodynamic analysis confirms the first-order nature of this sp2-to-sp3 transformation, with the transition predicted to occur at approximate to 33 GPa under experimental conditions. This transformation offers a novel pathway toward the synthesis of amorphous carbon with a high fraction of sp3 bonding, a long-standing challenge in materials science. This work expands understanding of carbon's high-pressure behavior and provides a compelling theoretical foundation for future experimental investigations aimed at synthesizing and characterizing this novel material.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    New High-Pressure Phase of MgH2: An Ab Initio Constant-Pressure Study
    (IOP Publishing Ltd, 2014-02-01) Durandurdu, Murat
    The stability of magnesium hydride (MgH2) at high pressure is studied using a constant-pressure ab initio technique. Two phase transformations are successfully observed through the simulations. The rutile structure undergoes a phase transformation into a CaCl2-type phase. Further increase in pressure results into a first-order phase transition into an orthorhombic state within Pbcm symmetry. This phase can be considered as a distorted CsF2-type crystal and does not correspond to the previously proposed MgH2 phases. The transformation mechanism of the CaCl2-Pbcm phase change at the atomistic level is successfully characterized and it is found that the CaCl2-to-Pbcm phase change proceeds via an ideal CaF2-type intermediate phase. These phase transformations are also analyzed using total energy-volume calculations.Copyright (C) EPLA, 2014
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Atomic Structure and Properties of Amorphous Boron Carbon Nitride (BC2N): An Ab Initio Study
    (Elsevier Science SA, 2025-03) Durandurdu, Murat
    This study investigates the atomic structure and properties of amorphous boron carbon nitride (a- BC2N) using ab initio molecular dynamics simulations. Structural analysis reveals a layer-like topology with varied bonding environments. Unlike the ordered alternating C-C and B-N layers found in the lowest-energy crystalline BC2N structure, a-BC2N features a solid-solution-like arrangement, with B, C, and N atoms randomly distributed within each layer. This randomness gives rise to small, distinct C-rich and BN-rich domains and irregular short zigzag chains of C-C and B-N bonds within each layer. Electronic structure analysis suggests that a-BC2N is likely a semiconductor. Mechanically, a-BC2N displays properties typical of layered materials but with an enhanced bulk modulus.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Amorphous GaN: Polyamorphism and Crystallization at High Pressure
    (Elsevier, 2024-05) Durandurdu, Murat
    Employing constant pressure ab initio simulations, we have shed light on the previously unknown high-pressure behavior of amorphous gallium nitride. Our findings reveal a two-step transformation sequence under pressure. The initial transition involves a polyamorphic transformation from a low-density amorphous (LDA) phase to a high-density amorphous (HDA) phase with an average coordination number of 5.4. Upon pressure release, the HDA state partially reverts to a denser amorphous network with a higher coordination number (4.34) compared to the original LDA phase. Further pressurization triggers the crystallization of the HDA state into a rocksalt structure. Remarkably, the electronic structure of the amorphous forms of GaN exhibits insignificant sensitivity to changes in coordination number, maintaining a band gap of approximately 1.7-2.0 eV across all phases.
  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Ab Initio Simulation of Amorphous BC3
    (Elsevier, 2020-06) Durandurdu, Murat
    We report the structural and electrical properties of an amorphous BC3 model based on ab initio molecular dynamics simulations. The amorphous network is achieved from the melt and has a layer-like structure consisting of mainly hexagonal (six membered) rings as in the crystal. However, the distribution of boron atoms in the noncrystalline configuration appears to differ significantly from that of boron atoms in the crystal. The network is a solid solution and has randomly distributed nanosized graphene-like domains at each layer. Boron atoms have a tendency to form more overcoordinated defects involving with boron-boron homopolar bond(s). The mean coordination of boron and carbon atoms is 3.2 and 3.0, respectively. Interestingly the amorphous configuration is found to have a slightly higher density and bulk modulus than the crystal, which are attributed to the existence of overcoordinated units in the amorphous state. Based on the localization of the band tail states, noncrystalline BC3 is speculated to be a semiconducting material.