WoS İndeksli Yayınlar Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394

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  • Article
    Citation - WoS: 2
    Citation - Scopus: 1
    Fully Inorganic Colloidal CsPbBr3 Perovskite Nanocrystals with Zn-Doping and Metal Oxide Encapsulation for Luminescent Display Panels
    (Amer Chemical Soc, 2025-11-07) Khorasani, Azam; Soheyli, Ehsan; Mutlugun, Evren
    Perovskite nanocrystals (PeNCs) are emerging as exceptional materials due to their high photoluminescence quantum yield, tunable bandgap, and excellent charge carrier mobility, enabling a wide range of colors and promising applications in optoelectronics and photovoltaics. Despite their advantages, PeNCs face stability challenges caused by environmental factors. In the presented study, a facile and versatile colloidal hot-injection method was used to apply the beneficial aspects of Zn-doping in cesium lead bromide (CsPbBr3) PeNCs. The uniform platelet-shaped Zn-doped CsPbBr3 PeNCs were prepared by doping with a 0.1 molar ratio of zinc-oleate solution in the perovskite precursors during synthesis. Then, zinc-oxide (ZnO) and nickel-oxide (NiO) coating layers were utilized separately to effectively reduce surface defects, encapsulate PeNCs, and improve their stability issues. To fabricate the coated PeNCs with metal oxides, zinc acetate and nickel(II) acetate tetrahydrate solutions were prepared individually and added to the crude perovskite solutions. The quantum yield of Zn-doped CsPbBr3 (CsPb1-xZnxBr3) PeNCs coated with ZnO increased from 50% for bare CsPbBr3 to over 84%, while NiO-coated PeNCs exhibited a higher yield of 90% both of which remarkably enhanced the emission stability. Moreover, NiO coatings represented a proper protection against surface imperfections and improved resistance to external stimuli. The combination of facile/effective preparation method, excellent emission efficiency, and reliable emission stability nominates the prepared colloidal composite for display pixels, detectors, and lasers.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 13
    Tuning the Shades of Red Emission in InP/ZnSe Nanocrystals With Narrow Full Width for Fabrication of Light-Emitting Diodes
    (Amer Chemical Soc, 2023-10-13) Soheyli, Ehsan; Bicer, Aysenur; Ozel, Sultan Suleyman; Tiras, Kevser Sahin; Mutlugun, Evren; Sahin Tiras, Kevser
    While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris-(dimethyl-amino)-phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626-670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50-70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m(-2), and a current efficiency of 0.88 cd A(-1).
  • Article
    Citation - WoS: 14
    Citation - Scopus: 13
    Spectrally Tunable White Light-Emitting Diodes Based on Carbon Quantum Dot-Doped Poly(N-Vinylcarbazole) Composites
    (Amer Chemical Soc, 2024-01-26) Sahin Tiras, Kevser; Bicer, Aysenur; Soheyli, Ehsan; Mutlugun, Evren
    Electroluminescent white light-emitting diodes (WLEDs) are always of great interest for emerging display applications. Carbon-based quantum dots (CQDs) are the newest emerging nanoscale materials that can be employed for this purpose, owing to their broad and bright light emission properties. In the present work, highly luminescent CQDs with an emission quantum yield of 60% were prepared via a colloidal solvothermal method and subsequent silica gel column chromatography. The photoluminescence (PL) peak was located at 550 nm possessing yellow emission, with a full width at half-maximum of 98 nm and a relatively long lifetime of 10.23 ns through a single-exponential recombination pathway. CQDs were employed in an electroluminescent device architecture of an ITO/PEDOT:PSS/TFB/CQD:PVK/TPBi/LiF/Al structure and blended with poly(N-vinylcarbazole) (PVK) to evaluate their ability to reach white electroluminescent emission. Results confirmed a high external quantum efficiency (EQE) of 0.76% and a maximum luminescence of 774.3 cd<middle dot>m(-2). Tuning the ratio between CQDs and PVK from 1:10.25 to 1:5.75 resulted in a systematic shift in CIE x-y coordinates from 0.23-0.26 to 0.21-0.24, located close to the cool white region. The results of the present study can be considered a step forward in fabricating efficient WLEDs based on low-cost CQDs.
  • Article
    Citation - WoS: 10
    Citation - Scopus: 11
    Recent Advances in CsPbX3 (X = Cl, Br, I) Perovskite NCs@Glass: Structures, Characterizations, and Applications
    (Wiley-VCH Verlag GmbH, 2025-04-07) Samiei, Sadaf; Lin, Jidong; Soheyli, Ehsan; Nabiyouni, Gholamreza; Chen, Daqin
    Encapsulation of perovskite nanocrystals (PeNCs) within metal oxide glasses and fabrication of PeNCs@glass composites has emerged as a transformative approach to enhance the stability and functionality of these promising luminescent materials. This review comprehensively examines the current state of research on encapsulation techniques, highlighting their effectiveness in preserving the structural integrity, and optical properties of PeNCs. The advantages and mechanisms by which metal oxide glasses mitigate the degradation of PeNCs are discussed and the tunable properties of metal oxide glass structures for optimizing the photoluminescence and quantum efficiency of encapsulated PeNCs are explored. The review further explores the various experimental techniques for characterizing composites made by nanoscale extreme crystalline species within the short-range ordered (amorphous) microstructures. As the ultimate aim of any advanced material for commercialization, diverse optoelectronic devices of these encapsulated systems, emphasize the potential for improved device performance and longevity. Finally, key challenges and future directions in the field are identified, including the need for scalable fabrication methods and the exploration of novel glass compositions to enhance the encapsulation efficacy. This review aims to provide a comprehensive overview of the advancements in the encapsulation of PeNCs with metal oxide glasses, underscoring their significance in developing next-generation optoelectronic devices.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 15
    Rational Design of Chemical Bath Deposition Technique for Successful Preparation of Mn-Doped CdS Nanostructured Thin Films With Controlled Optical Properties
    (Elsevier Sci Ltd, 2021-02) Kharabaneh, Farzaneh Khani; Ghavidel, Elham; Soheyli, Ehsan; Yazici, Ahmet Faruk; Jawhar, Nawzad Nadhim; Mutlugun, Evren; Sahraei, Reza
    The introduction of a rational design for depositing internally-doped nanostructured thin films is of great importance for optoelectronics. In this presented work, Mn-doped CdS thin films with high purity in composition were prepared through the chemical bath deposition technique using a nucleation-doping strategy. This work focuses on an improved chemical design to eliminate mostly ignored property of conventionally doped nanoscale thin films. The synthesis strategy was initiated by the initial formation of MnS nuclei in a colloidal depositing solution followed by injection of cadmium precursor to diffuse into the initial nuclei and play the role of host CdS matrix which was the beginning of the deposition process. Upon optimization of the PL-emission, it was revealed that relative intensity of Mn2+-related peak to the excitonic peak has significantly increased (similar to 100 times) in 80 degrees C, pH = 6, and precursor molar ratio of Cd:Mn:EDTA:S equal to 1:3:0.4:5, at deposition time of 300-min. The TRPL measurements further revealed the effective contribution of Mn-related midgap states with long-lived decay curve character, which confirms the success of the designed approach to reach internally doped thin films. It was found that the deposition temperature, amount of Cd/Mn/TA precursors, and deposition time are the most important experimental parameters in the proposed synthesis approach. Due to the versatility, generality, and colloidal advantages of this method, it can be extended to the other structures with various types of dopant agent.
  • Article
    Citation - WoS: 23
    Citation - Scopus: 25
    Preparation of Highly Emissive and Reproducible Cu-In-S/ZnS Core/Shell Quantum Dots With a Mid-Gap Emission Character
    (Elsevier Science SA, 2020-05) Jawhar, Nawzad Nadhim; Soheyli, Ehsan; Yazici, Ahmet Faruk; Mutlugun, Evren; Sahraei, Reza
    Copper indium sulfide (CIS) quantum dots (QDs) are one of the newest types of luminescent semiconductors with low-toxicity and earth-abundant features. The present work reports the successful aqueous synthesis of CIS/ZnS core/shell QDs using dual-stabilizing agents of N-acetyl-L-cysteine and trisodium citrate. Off-stoichiometric QDs with In-rich compositions were found to be very small and highly emissive after coating by a shell of wide bandgap ZnS. The effect of various experimental parameters was evaluated to achieve highly reproducible QDs with bright reddish emission. Results showed a significant contribution of mid-gap defect states in the recombination processes (based on the gradual increase in absorbance recorded for samples, relatively high Urbach energy, large Stokes shift, large FWHM value in PL spectra, as well as the long-lived PL decay time). In addition, the chemical stability of samples was investigated using highly oxidant H2O2 agent and results demonstrate their superior stability. The combination of low-toxicity, intense and stable emission, along with synthetic advantages demonstrates that the present aqueous-soluble and emissive QDs can be considered as an excellent bio-photonic structure suitable for different fields of biological imaging and diagnostics. (C) 2020 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Optimization of High Efficiency Blue Emissive N-, S-Doped Graphene Quantum Dots
    (Elsevier, 2025-02) Tiras, Kevser Sahin; Soheyli, Ehsan; Sharifirad, Zeynab; Mutlugun, Evren
    Graphene quantum dots (GQDs) with bright emission at short wavelengths have attracted much attention due to their importance in various applications such as light-emitting diodes. During or after synthesis, several parameters can significantly improve the optical properties of GQDs. This study presents a facile solvothermal method with low-cost precursors using glutamic acid as the carbon source to realize blue emitting GQDs. The positive effects of urea and 1-octanethiol as nitrogen and sulfur dopants on the photoluminescence quantum yield (PLQY) of the prepared GQDs were demonstrated and optimized. The results confirmed the formation of 2.2 nm nanoparticles with a bright emission around 381 nm with a full width at half maximum of 58 nm and a PLQY approaching 70 %. The decay lifetime of the emission also showed a tri-exponential profile with an average lifetime of 2.4 ns. The simplicity of the preparation method without any post-treatment process, together with a high PLQY of 70 % at short wavelengths, nominates the prepared GQDs for optoelectronics and UV light-driven biological purposes.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 14
    Nanowire-Shaped MoS2@MoO3 Nanocomposites as a Hole Injection Layer for Quantum Dot Light-Emitting Diodes
    (Amer Chemical Soc, 2022-08-01) Bastami, Nasim; Soheyli, Ehsan; Arslan, Aysenur; Sahraei, Reza; Yazici, Ahmet Faruk; Mutlugun, Evren
    Molybdenum disulfides and molybdenum trioxides are structures that possess the potential to work as efficient charge transport layers in optoelectronic devices. In the present study, as opposed to the existing Mo-based nanostructures in flake, sheet, or spherical forms, an extremely simple and low-cost hydrothermal method is used to prepare nanowires (NWs) of MoS2@MoO3 (MSO) composites. The synthesis method includes several advantages including easy handling and processing of inexpensive precursors to reach stable MSO NWs without the need for an oxygen-free medium, which would facilitate the possibility of mass production of these nanostructures. The structural analysis confirmed the formation of MSO nanocomposites with different Mo valence states, as well as NWs of average length and diameter of 70 nm and 5 nm, respectively. In order to demonstrate their potential for optoelectronic applications, MSO NWs were blended into hole injection layers (HILs) in quantum dot-based light emitting diodes (QLEDs). Electroluminescence measurements show a substantial enhancement in both luminance (from 44,330 to 68,630 cd.m-2) and external quantum efficiency (from 1.6 to 2.3%), based on the increase in the ratio of MSO NWs from 3 to 10%. Interestingly, the addition of 10% volume of MSO NWs resulted in a remarkably smoother HIL with improved current efficiency and stability in green-emitting QLEDs. The simplicity and cost-effective features of the synthesis method along with outstanding favorable morphology demonstrated their ability to enhance the QLED performance and mark them as promising agents for optoelectronics.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 11
    Long-Time Stable Colloidal Zn-Ag Quantum Dots With Tunable Midgap-Involved Emission
    (AIP Publishing, 2021-02-11) Sabzevari, Zahra; Sahraei, Reza; Jawhar, Nawzad Nadhim; Yazici, Ahmet Faruk; Mutlugun, Evren; Soheyli, Ehsan
    Quaternary Zn-Ag-In-S (ZAIS) quantum dots (QDs) with efficient, tunable, and stable photoluminescence (PL) emission were prepared via a simple, effective, and low-cost reflux method. The structural analysis revealed the dominance of the quantum confinement effect. The calculated PL emission quantum yield was enhanced from 8.2% to 28.7% with experimental parameters indicating their marked influence on the PL emission properties of the final product. Particularly, it was found that by varying the precursors' feeding ratio, tunable emission from green to red was achieved. A set of direct and indirect pieces of evidence such as the broad-band emission spectrum (FWHM>100nm), large Stokes shift more than 120nm, and predominantly a biexponentially long-lived decay profile with an average lifetime of about 366ns were observed, showing the contribution of midgap localized energy levels in the recombination process. These data were obtained independently on the experimental condition used, which confirmed that this is mostly an intrinsic electronic property of quaternary In-based QDs. Finally, to ensure the stability of QDs in terms of colloidal and optical emission, their emission ability was evaluated after 26 months of storage. Colloidal QDs were still luminescent with strong yellowish-orange color with emission efficiency of similar to 20.3% after 26 months. The combination of synthesis simplicity, compositional non-toxicity, PL emission superiority (strong, tunable, stable, and long lifetime emission), and colloidal stabilities confirms that the present ZAIS QDs are promising candidates for a wide range of applications in biomedicine, anticounterfeiting, and optoelectronics.
  • Article
    Citation - WoS: 6
    Citation - Scopus: 9
    Impact of Red Emissive Zncdtes Quantum Dots on the Electro-Optic Switching, Dielectric and Electrochemical Features of Nematic Liquid Crystal: Towards Tunable Optoelectronic Systems
    (Elsevier, 2023-06) Seidalilir, Zahra; Shishehbor, Sepideh; Soheyli, Ehsan; Sabaeian, Mohammad
    In the present study, the concentration-dependent dielectric, electro-optical, and electrochemical properties of ZnCdTeS quantum dots (QDs) doped E7 nematic liquid crystal (NLC) mixtures were investigated. The dielectric permittivity components (epsilon(parallel to) and epsilon(perpendicular to)) and dielectric anisotropy (Delta epsilon -epsilon(parallel to) - epsilon perpendicular to.) of NLC samples containing varied concentrations of ZnCdTeS QDs (i. e. 0.10, 0.25, 0.50, 0.75, and 1 wt%) were measured at various temperatures. In the nematic phase, the results demonstrated that e. increases much more than epsilon(perpendicular to) upon an increase in the concentration of ZnCdTeS QDs. Delta epsilon enhanced as the concentration of QDs increased, reaching a maximum at 0.50 wt%, then decreased with further addition. Dielectric measurements revealed the formation of self-aligned QD arrays along the nematic director, which act similarly to multiple parallel capacitors in the NLC system. Moreover, electro-optical studies illustrated the significant effect of QDs doping on lowering the threshold voltage and response time. Interestingly, the optical switching-off time of NLC containing 0.50 wt% of the QDs decreased by similar to 50% compared to that of the pure E7 sample. The reduced screening effect resulting from the QDs ioncapturing mechanism, enhanced effective intermolecular interactions, and increased dielectric anisotropy in the NLC system are the major factors responsible for the improved electro-optical characteristics. The impedance behavior of NLC cells was studied in the frequency range of 0.1 Hz-100 kHz. It indicated that the addition of ZnCdTeS QDs results in a remarkable increase of 96% in the electrical conductivity of the NLC system. Furthermore, the QDs doping significantly improved the NLC device's charge capacitance. Such studies would undoubtedly be beneficial for designing next-generation tunable optoelectronic systems since QDs can be utilized for tuning the dielectric anisotropy, electro-optical characteristics, charge capacitance, and conductivity of NLCs.