WoS İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394
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Article Citation - WoS: 1Citation - Scopus: 1Photoluminescent Carbon Dots for Sensitive and Selective Cu2+ Ion Detection(Institute of Physics, 2026-01-07) Sahin-Tiras, K.; Karabel Ocal, S.; Mutlugün, E.; Sahin Tiras, KevserGreen-emitting carbon dots (CDs) were synthesized via a solvent-free, vacuum-assisted method using citric acid and urea. The CDs exhibited strong photoluminescence and served as selective, sensitive probes for Cu2+ detection in water, with a detection limit of 26 nM. Among the tested metal ions, Cu2+ induced the most significant PL quenching. Time-resolved photoluminescence measurements of the CDs in the presence of Cu2+ ions revealed a minimal change in lifetime, despite a significant decrease in PL intensity, along with unchanged UV-vis absorption, indicating a mixed quenching mechanism. The sensor’s applicability was confirmed in raisin extract and tea infusion, showing notable PL suppression. With their simplicity, selectivity, and sensitivity, these CDs offer promising potential as nanosensors for detecting Cu2+ in environmental and real-world analytical settings. © 2026 The Author(s). Published by IOP Publishing Ltd.Article Colloidal Photodetectors Based on Engineered Multishelled InP Based Quantum Dots(Institute of Physics, 2026-01-08) Akrema; Erol, E.; Savaş, M.; Yazici, A.; Erdem, T.; Mutlugün, E.; Faruk Yazıcı, AhmetIn this work, we present a straightforward and cost-effective approach to synthesize multi-shell InP/ZnSe/ZnSeS/ZnS quantum dots (QDs) that show promising potential for use in photodetectors. By carefully layering ZnSe, ZnSeS, and ZnS shells around an InP core, we were able to enhance the stability and optical performance of the QDs, achieving a narrow emission peak of 45 nm and a high photoluminescence quantum yield of 55%. These QDs were then integrated into simple photodetector devices, which possessed impressive sensitivity and detection capabilities. Specifically, our devices achieved a peak responsivity of 0.54 A W−1 and a detectivity of 2.22 × 1011 Jones at 400 nm with a 5 V bias. This study highlights the potential of InP-based QDs as a safer and more sustainable alternative to traditional QDs that contain toxic heavy metals, offering a viable path forward for developing high-performance optoelectronic devices. Our findings suggest that these InP/ZnSe/ZnSeS/ZnS QDs could be a key material for the next generation of high-performance optoelectronic devices, especially in applications that require highly sensitive and stable photodetectors. © 2026 The Author(s). Published by IOP Publishing Ltd.
