WoS İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394
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Article Citation - WoS: 5Citation - Scopus: 5Π-Conjugated Donor-Acceptor Small Molecule Thin-Films on Gold Electrodes for Reducing the Metal Work-Function(Elsevier Science SA, 2016-10) Azum, Naved; Taib, Layla Ahmad; Al Angari, Yasser Mohammed; Asiri, Abdullah M.; Denti, Mitchel; Zhao, Wei; Facchetti, AntonioThis paper reports the design, facile synthesis and purification of four pi-conjugated donor-acceptor small molecules comprising heteroaromatic units, DA-1-DA-4, for surface and electronic structure modification of gold thin film. These molecules were characterized by H-1/C-13 nuclear magnetic resonance spectroscopy, cyclic voltammetry, UV-Vis spectroscopy, and single-crystal X-ray diffraction. Morphologically smooth thin-films (similar to 5 nm) of DA-1-DA-4 were deposited onto Au thin films via thermal evaporation and characterized by atomic force microscopy, theta-2 theta X-ray diffraction and ultraviolet photoelectron spectroscopy. The work functions of the small molecule coated Au electrodes are shifted to lower energies by similar to 0.1-03 eV, compared to that of the bare Au film measured as a reference. The vapor-deposition of structurally,simple small molecules developed here shows great promise as a facile approach to reduce gold work function for electron injection/extraction between organic semiconductors and Au contacts in various opto-electronic devices. (C) 2016 Elsevier B.V. All tights reserved.Article Citation - WoS: 12Citation - Scopus: 14Insights Into Interface Treatments in P-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor(IEEE-Inst Electrical Electronics Engineers Inc, 2017-05) Liguori, Rosalba; Usta, Hakan; Fusco, Sandra; Facchetti, Antonio; Licciardo, Gian Domenico; Di Benedetto, Luigi; Rubino, AlfredoOrganic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm(2)/V . s, respectively. Surface treatments of the substrate, insulator, and metal contacts used for OTFT fabrication employing polymer films and different self-assembled monolayers were investigated. In particular, in bottom-gate devices, the insulator surface hydrophobicity was optimized by the deposition of poly(methyl methacrylate) or hexamethyldisilazane, while in the top-gate geometry, pentafluorobenzenethiol was efficiently used to modify the substrate surface energy and to change the contact work function. Atomic force microscopy analysis was exploited to understand the relationship between the semiconductor thin-film morphology and the device electrical performance. The results shown here indicate an inverse proportionality between the mobility and the interface trap density, with parameters depending especially on semiconductor-insulator interfacial properties, and a correlation between the threshold voltage and the characteristics of the semiconductor-metal interface.