WoS İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12573/394
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Article Pressure-Induced Polyamorphic Transition and Stepwise Ordering to Superhard B-Doped Diamond-like BC3(Elsevier Science SA, 2026-04) Durandurdu, MuratWe employ constant-pressure ab initio molecular dynamics simulations to investigate the pressure-induced phase transformations of amorphous BC3, which initially possesses a graphite-like layered structure. Our simulations reveal a first-order polyamorphic transition marked by a significant volume collapse and an increase in atomic coordination from a predominantly sp(2) network to a dense, tetrahedrally coordinated sp(3) network. Subsequent thermal annealing of the high-pressure phase uncovers a multi-step ordering process involving a metastable paracrystalline intermediate that bridges the high-density amorphous state and a thermally induced boron-doped diamond-like phase. All high-pressure phases are quenchable to ambient conditions, importantly retaining their semiconducting electronic structures across these transformations. Mechanical characterization demonstrates substantial stiffening, with bulk moduli ranging similar to 252 to 323 GPa. These findings illuminate novel and accessible routes to superhard semiconducting BC3 phases stabilized by pressure and temperature, with the boron-doped diamond-like phase identified as a metastable superhard semiconductor that is thermodynamically favored over the amorphous precursor but kinetically accessible only via the stepwise pathway described. This offers promising directions for advanced material design under extreme conditions.Article Densification-Induced Chemical Reorganization and Mechanical Enhancement in Amorphous Si2BC3N(Elsevier, 2026-02) Durandurdu, MuratThe atomistic mechanisms that govern the mechanical performance of amorphous silicon-boron carbonitride (SiBCN) ceramics remain insufficiently understood, particularly regarding the role of density. Here, we employ ab initio molecular dynamics simulations to elucidate the structural evolution and mechanical response of low-density (LDA, 2.20 g/cm3) and high-density (HDA, 2.53 g/cm3) amorphous Si2BC3N prepared via melt-quench. The HDA phase exhibits markedly higher atomic packing and network connectivity, accompanied by a nontrivial chemical reorganization. Densification significantly enhances heteronuclear bonding-especially Si-C coordination-while suppressing C-C and Si-Si homopolar bonds. These changes yield substantial mechanical strengthening: the HDA phase exhibits a 48% increase in bulk modulus (130 GPa vs. 88 GPa), along with elevated Young's (266 GPa) and shear (112 GPa) moduli. Our findings reveal a clear density-structure-property relationship in amorphous SiBCN, demonstrating that densification suppresses weak self-bonded motifs and promotes a robust, interconnected atomic network. This insight provides a pathway for designing high-performance amorphous SiBCN ceramics for extreme-environment applications.Article Tuning Properties of Amorphous Boron Via Hydrogenation: An Ab Initio Study(Elsevier, 2026-01) Durandurdu, MuratAb initio simulations are employed to investigate the structural, mechanical, and electronic properties of hydrogenated amorphous boron (a-B:H) across a range of hydrogen concentrations (approximate to 6-21 at.%). The results indicate that pentagonal-like boron clusters constitute the primary structural motifs. The bonding environment consists of both B-H terminal bonds and B-H-B bridging bonds, with the fraction of bridging bonds ranging from 10 % to 16 %. Increasing the hydrogen content leads to a reduction in density and bulk modulus, accompanied by a systematic widening of the electronic band gap. These results demonstrate that hydrogen incorporation profoundly modifies the atomic structure, softens the network, and enhances the semiconducting character of a-B:H, highlighting the tunability of properties in boron-based amorphous materials.Article Citation - WoS: 5Citation - Scopus: 5Structural and Electronic Transformations of GeSe2 Glass Under High Pressures Studied by X-Ray Absorption Spectroscopy(Natl Acad Sciences, 2024-03-27) Mijit, Emin; Durandurdu, Murat; Rodrigues, Joao Elias F. S.; Trapananti, Angela; Rezvani, S. Javad; Rosa, Angelika Dorothea; Di Cicco, Andrea; Javad Rezvani, S.Pressure-induced transformations in an archetypal chalcogenide glass (GeSe2) have been investigated up to 157 GPa by X-ray absorption spectroscopy (XAS) and molecular dynamics (MD) simulations. Ge and Se K-edge XAS data allowed simultaneous tracking of the correlated local structural and electronic changes at both Ge and Se sites. Thanks to the simultaneous analysis of extended X-ray absorption fine structure (EXAFS) signals of both edges, reliable quantitative information about the evolution of the first neighbor Ge-Se distribution could be obtained. It also allowed to account for contributions of the Ge-Ge and Se-Se bond distributions (chemical disorder). The low-density to high-density amorphous-amorphous transformation was found to occur within 10 to 30 GPa pressure range, but the conversion from tetrahedral to octahedral coordination of the Ge sites is completed above similar to 80 GPa. No convincing evidence of another high-density amorphous state with coordination number larger than six was found within the investigated pressure range. The number of short Ge-Ge and Se-Se "wrong" bonds was found to increase upon pressurization. Experimental XAS results are confirmed by MD simulations, indicating the increase of chemical disorder under high pressure.Article Citation - WoS: 1Citation - Scopus: 1Quenchable Amorphous Diamond: A Novel High-Pressure Route to Tetrahedral Amorphous Carbon(Wiley-VCH Verlag GmbH, 2025-05-03) Durandurdu, MuratThis study presents a groundbreaking theoretical prediction: the high-pressure transformation of amorphous graphite into a high-fraction sp3-bonded amorphous diamond phase. Employing ab initio molecular dynamics simulations, it is demonstrated that under extreme pressures, amorphous graphite undergoes an irreversible transition to an amorphous diamond phase. Thermodynamic analysis confirms the first-order nature of this sp2-to-sp3 transformation, with the transition predicted to occur at approximate to 33 GPa under experimental conditions. This transformation offers a novel pathway toward the synthesis of amorphous carbon with a high fraction of sp3 bonding, a long-standing challenge in materials science. This work expands understanding of carbon's high-pressure behavior and provides a compelling theoretical foundation for future experimental investigations aimed at synthesizing and characterizing this novel material.Article Pressure-Induced Quenchable Superhard Tetrahedral Amorphous Phase of BC4N(Wiley, 2025-03-13) Durandurdu, MuratThe high-pressure behavior of an amorphous boron carbon nitride (BC4N) composition is investigated using constant-pressure ab initio molecular dynamics simulations. A first-order phase transformation into a tetrahedral amorphous phase with a high fraction of sp3 bonding is observed. This tetrahedral phase is quenchable and exhibits ultra-high incompressibility and a high Vickers hardness (46 GPa), placing it firmly in the category of superhard materials, comparable to tetrahedral amorphous carbon. Tetrahedral amorphous BC4N demonstrates semiconducting behavior with a narrow bandgap of 0.4 eV, making it suitable for applications requiring both mechanical robustness and moderate electronic conductivity. Thermodynamic analyses confirm the likelihood of a first-order sp2-to-sp3 transition, suggesting that such a transformation could occur around 29 GPa under experimental conditions.Article Pressure-Driven Structural Evolution of Amorphous InN(Elsevier, 2025-02) Durandurdu, MuratThrough constant-pressure ab initio simulations, we have uncovered high-pressure phase transformations in amorphous indium nitride for the first time. Our results reveal a distinct two-step progression under compression. Initially, a polyamorphic transition occurs, where the low-density amorphous (LDA) phase transforms into a high-density amorphous (HDA) phase. This HDA structure remains stable in some pressure range and then crystallization initiates, leading to a rocksalt configuration. Upon decompression, the HDA phase reverts to an amorphous network with a slightly higher density and coordination number than the initial LDA state.Article Citation - WoS: 2Citation - Scopus: 2Possible Boron-Rich Amorphous Silicon Borides From Ab Initio Simulations(Springer, 2023-03-10) Karacaoglan, Aysegul Ozlem Cetin; Durandurdu, MuratContextBy means of ab initio molecular dynamics simulations, possible boron-rich amorphous silicon borides (BnSi1-n, 0.5 <= n <= 0.95) are generated and their microstructure, electrical properties and mechanical characters are scrutinized in details. As expected, the mean coordination number of each species increases progressively and more closed packed structures form with increasing B concentration. In all amorphous models, pentagonal pyramid-like configurations are observed and some of which lead to the development of B-12 and B11Si icosahedrons. It should be noted that the B11Si icosahedron does not form in any crystalline silicon borides. Due to the affinity of B atoms to form cage-like clusters, phase separations (Si:B) are perceived in the most models. All simulated amorphous configurations are a semiconducting material on the basis of GGA+U calculations. The bulk modulus of the computer-generated amorphous compounds is in the range of 90 GPa to 182 GPa. As predictable, the Vickers hardness increases with increasing B content and reaches values of 25-33 GPa at 95% B concentration. Due to their electrical and mechanical properties, these materials might offer some practical applications in semiconductor technologies.MethodThe density functional theory (DFT) based ab initio molecular dynamics (AIMD) simulations were used to generate B-rich amorphous configurations.Article Citation - WoS: 1Citation - Scopus: 1Phase-Separated Amorphous Si2BN: A Computational Study(AIP Publishing, 2025-02-11) Durandurdu, MuratThis study investigates the atomic structure, bonding, and electrical and mechanical properties of amorphous silicon boron nitride (a-Si2BN) using ab initio molecular dynamics simulations. The simulations reveal a distinct phase-separated structure comprising Si-rich and BN-rich domains. BN layers are embedded within the amorphous Si matrix, with only a few bridging atoms linking these regions. The Si-rich region exhibits topological similarities to amorphous silicon, albeit with notable structural distortions. Electronic structure calculations indicate semiconducting behavior with a small bandgap, while mechanical property analysis shows a moderate bulk modulus and Young's modulus, achieving a balance between rigidity and elasticity. These findings position a-Si2BN as a promising material for advanced applications, including flexible electronics, high-temperature semiconductors, and energy storage devices. While the proposed structure is currently hypothetical, its potential experimental realization could open new avenues in material design for emerging technologies.Article Irreversible Changes in Amorphous C3n4 Under Pressure: Loss of Chemical Order and Graphite-Like Character(Taylor & Francis Ltd, 2025-04-03) Durandurdu, MuratThe high-pressure behavior of triazine-based amorphous C3N4, initially exhibiting a chemically ordered, graphite-like structure, was investigated using ab initio molecular dynamics simulations. Our study reveals a pressure-induced transition to a high-density amorphous (HDA) phase characterized by increased coordination number for carbon (3.88) and nitrogen (2.93) atoms. This transition occurs gradually over a broad pressure range, initiated by the breakdown of chemical ordering and the formation of homopolar C-C and N-N bonds, which persist in both the HDA and recovered phases. The recovered phase retains elevated coordination numbers (C: 3.25, N: 2.46) but loses its initial graphite-like topology, evolving into a three-dimensional network structure. Electronic structure analysis reveals semiconducting behavior in the HDA phase and n-type semiconductor characteristics in the recovered phase.