Browsing by Author "Yakuphanoglu, F."

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Citation - WoS: 20
Citation - Scopus: 20
Frequency and Electric Field Controllable Photodevice: FYTRONIX Device
(Elsevier Science Bv, 2017) Tataroglu, A.; Al-Sehemi, Abdullah G.; Ozdemir, Mehmet; Ozdemir, Resul; Usta, Hakan; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage ( I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications.
Citation - WoS: 11
Citation - Scopus: 11
Logarithmic Organic Photodetectors
(Elsevier Science SA, 2015) Elgazzar, Elsayed; Ozdemir, Mehmet; Usta, Hakan; Al-Ghamdi, Ahmed A.; Dere, A.; El-Tantawy, Farid; Yakuphanoglu, F.
A novel photodetector of Al/GO:C8-BTBT/n-Si/Au with various graphene oxide (GO) contents has been investigated. The electrical properties of the diodes were characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The values of barrier height, ideality factor, and series resistance of the diodes were determined from I-V characteristic curves by using Norde's equations. The photocurrent properties of the diode were studied under various illumination intensities. The photoconducting mechanism of the diodes is controlled by the traps. The photoresponse properties of the diodes are increased with GO contents. The obtained results indicate that graphene oxide doped 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene/n-Si heterojunctions can be used as a photodetector for optoelectronic applications. (C) 2015 Elsevier B.V. All rights reserved.
Citation - WoS: 2
Citation - Scopus: 1
Ambipolar Small Molecular Semiconductor-Based Heterojunction Diode
(Elsevier Science SA, 2016) Ocaya, R. O.; Ozdemir, Mehmet; Ozdemir, Resul; Al-Ghamdi, Ahmed; Usta, Hakan; Farooq, W. A.; Yakuphanoglu, F.
A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination. (C) 2016 Elsevier B.V. All rights reserved.