Browsing by Author "Rubino, Alfredo"

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Insights Into Interface Treatments in p-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC445 HOES LANE, PISCATAWAY, NJ 08855-4141, 2017) Liguori, Rosalba; Usta, Hakan; Fusco, Sandra; Facchetti, Antonio; Licciardo, Gian Domenico; Di Benedetto, Luigi; Rubino, Alfredo; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Usta, Hakan
Organic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm(2)/V . s, respectively. Surface treatments of the substrate, insulator, and metal contacts used for OTFT fabrication employing polymer films and different self-assembled monolayers were investigated. In particular, in bottom-gate devices, the insulator surface hydrophobicity was optimized by the deposition of poly(methyl methacrylate) or hexamethyldisilazane, while in the top-gate geometry, pentafluorobenzenethiol was efficiently used to modify the substrate surface energy and to change the contact work function. Atomic force microscopy analysis was exploited to understand the relationship between the semiconductor thin-film morphology and the device electrical performance. The results shown here indicate an inverse proportionality between the mobility and the interface trap density, with parameters depending especially on semiconductor-insulator interfacial properties, and a correlation between the threshold voltage and the characteristics of the semiconductor-metal interface.
Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric
(IEEE, 2015) Loffredo, Fausta; GRIMALDI, IMMACOLATAANGELICA; Miscioscia, Riccardo; Nenna, Giuseppe; Villani, Fulvia; Minarini, Carla; Petrosino, Mario; Rubino, Alfredo; Usta, Hakan; Facchetti, Antonio; 0000-0002-0618-1979; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Usta, Hakan
In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.