Browsing by Author "Rubino, Alfredo"

Now showing 1 - 2 of 2

Citation - WoS: 12
Citation - Scopus: 14
Insights Into Interface Treatments in P-Channel Organic Thin-Film Transistors Based on a Novel Molecular Semiconductor
(IEEE-Inst Electrical Electronics Engineers Inc, 2017) Liguori, Rosalba; Usta, Hakan; Fusco, Sandra; Facchetti, Antonio; Licciardo, Gian Domenico; Di Benedetto, Luigi; Rubino, Alfredo
Organic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm(2)/V . s, respectively. Surface treatments of the substrate, insulator, and metal contacts used for OTFT fabrication employing polymer films and different self-assembled monolayers were investigated. In particular, in bottom-gate devices, the insulator surface hydrophobicity was optimized by the deposition of poly(methyl methacrylate) or hexamethyldisilazane, while in the top-gate geometry, pentafluorobenzenethiol was efficiently used to modify the substrate surface energy and to change the contact work function. Atomic force microscopy analysis was exploited to understand the relationship between the semiconductor thin-film morphology and the device electrical performance. The results shown here indicate an inverse proportionality between the mobility and the interface trap density, with parameters depending especially on semiconductor-insulator interfacial properties, and a correlation between the threshold voltage and the characteristics of the semiconductor-metal interface.
Citation - WoS: 1
Citation - Scopus: 2
Interface Engineering in Organic Thin Film Transistors
(Institute of Electrical and Electronics Engineers Inc., 2017) Liguori, R.; Fusco, Sandra; Rubino, Alfredo; Usta, Hakan; Facchetti, A. F.
A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied. © 2018 Elsevier B.V., All rights reserved.