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    Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric
    (IEEE, 2015) Loffredo, Fausta; GRIMALDI, IMMACOLATAANGELICA; Miscioscia, Riccardo; Nenna, Giuseppe; Villani, Fulvia; Minarini, Carla; Petrosino, Mario; Rubino, Alfredo; Usta, Hakan; Facchetti, Antonio; 0000-0002-0618-1979; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Usta, Hakan
    In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.