Browsing by Author "Kacar, Rifat"

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    A hybridized local and charge transfer excited state for solution-processed non-doped green electroluminescence based on oligo(p-phenyleneethynylene)
    (ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND, 2020) Usta, Hakan; Alimli, Dilek; Ozdemir, Resul; Tekin, Emine; Alkan, Fahri; Kacar, Rifat; Altas, Ahu Galen; Dabak, Salih; Gurek, Ayse Gul; Mutlugun, Evren; Yazici, Ahmet Faruk; Can, Ayse; 0000-0003-4564-9447; 0000-0002-7957-110X; 0000-0003-2747-7856; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü
    We herein report a new highly efficient green emissive hot-exciton molecule, 1,4-bis((4'-diphenylamino3-cyano-[1,1'-biphenyl]-4-yl)ethynyl)-2,5-bis(2-ethylhexyloxy)benzene (2EHO-TPA-CNPE) that consists of an extended D'-pi'-A-pi-D-pi-A-pi'-D' molecular p-system with diphenylamino end units (D') and ethynylene/phenylene spacers (pi/pi'). The new molecule exhibits high photoluminescence (PL) quantum efficiencies (Phi(PL) = 0.95 (solution) and 0.45 (spin-coated neat thin-film)), and a strong PL solvatochromic behavior revealing significant changes in excited state energies/characteristics (locally excited (LE) -> hybridized local and charge transfer (HLCT) - charge-transfer (CT)) depending on solvent polarity. Highly efficient (radiative exciton yield (eta(r)) = 50-59% >> 25%) green-emitting OLEDs were fabricated in a conventional device architecture by employing (non-)doped thin-films reaching a maximum current efficiency (CEmax) of 12.0 cd A(-1) and a maximum external quantum efficiency (EQE(max)) of 5.5%. The emission profile of the non-doped OLED has CIE 1976 (u', v') chromaticity coordinates of (0.10, 0.55) corresponding to a night vision imaging system (NVIS) compatible Green A region. 2EHO-TPA-CNPE-based OLED devices of industrial relevance were also fabricated by ink-jet printing the emissive layer and by fabricating an inverted architecture, which possessed respectable device performances of 2.4-6.1 cd A(-1). The solid-state solvation effect in OLED devices yields HLCT electronic behavior resulting in high Zr's, which is confirmed by TDDFT to originate from energetically/spatially favorable reverse intersystem crossings (RISCs) (T-2/3 -> S-1). As a unique observation, delayed fluorescence due to this RISC was evident in the PL decay lifetime measurement with a ns-scale lifetime of similar to 10 ns. These results clearly allow a better understanding of the structure-photophysical property-electroluminescence relationships in this new class of oligo(p-phenyleneethynylene)-based hot-exciton molecules, and it could open up new opportunities for high-performance solution-processed optoelectronic/sensing applications.
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    Tailoring Quantum Dot Shell Thickness and Polyethylenimine Interlayers for Optimization of Inverted Quantum Dot Light-Emitting Diodes
    (MDPI, 2024) Yazici, Ahmet F.; Ocal, Sema Karabel; Bicer, Aysenur; Serin, Ramis B.; Kacar, Rifat; Ucar, Esin; Ulku, Alper; Erdem, Talha; Mutlugun, Evren; 0000-0003-3905-376X; 0000-0003-3715-5594; 0000-0003-2747-7856; AGÜ, Mühendislik Fakültesi, Elektrik - Elektronik Mühendisliği Bölümü; Yazici, Ahmet F.; Ocal, Sema Karabel; Bicer, Aysenur; Erdem, Talha; Mutlugun, Evren
    Quantum dot light-emitting diodes (QLEDs) hold great promise for next-generation display applications owing to their exceptional optical properties and versatile tunability. In this study, we investigate the effects of quantum dot (QD) shell thickness, polyethylenimine (PEI) concentration, and PEI layer position on the performance of inverted QLED devices. Two types of alloyed-core/shell QDs with varying shell thicknesses were synthesized using a one-pot method with mean particle sizes of 8.0 ± 0.9 nm and 10.3 ± 1.3 nm for thin- and thick-shelled QDs, respectively. Thick-shelled QDs exhibited a higher photoluminescence quantum yield (PLQY) and a narrower emission linewidth compared to their thin-shelled counterparts. Next, QLEDs employing these QDs were fabricated. The incorporation of PEI layers on either side of the QD emissive layer significantly enhanced device performance. Using PEI on the hole transport side resulted in greater improvement than on the electron injection side. Sandwiching the QD layer between two PEI layers led to the best performance, with a maximum external quantum efficiency (EQE) of 17% and a peak luminance of 91,174 cd/m2 achieved using an optimized PEI concentration of 0.025 wt% on both electron injection and hole injection sides. This study highlights the critical role of QD shell engineering and interfacial modification in achieving high-performance QLEDs for display applications.