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Browsing by Author "Farooq, W. A."

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    Ambipolar small molecular semiconductor-based heterojunction diode
    (ELSEVIER SCIENCE SAPO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2016) Ocaya, R. O.; Ozdemir, Mehmet; Ozdemir, Resul; Al-Ghamdi, Ahmed; Usta, Hakan; Farooq, W. A.; Yakuphanoglu, F.; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Ozdemir, Mehmet; Ozdemir, Resul
    A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination. (C) 2016 Elsevier B.V. All rights reserved.
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    Frequency and electric field controllable photodevice: FYTRONIX device
    (ELSEVIERRADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS, 2017) Tataroglu, A.; Al-Sehemi, Abdullah G.; Ozdemir, Mehmet; Ozdemir, Resul; Usta, Hakan; Al-Ghamdi, Ahmed A.; Farooq, W. A.; Yakuphanoglu, F.; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Ozdemir, Mehmet; Ozdemir, Resul; Usta, Hakan
    Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage ( I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications.