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Browsing by Author "Dang, Cuong"

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    Efficient generation of emissive many-body correlations in copper-doped colloidal quantum wells
    (Elsevier, 2022) Yu, Junhong; Sharma, Manoj; Li, Mingjie; Liu, Baiquan; Hernandez-Martinez, Pedro Ludwig; Delikanli, Savas; Sharma, Ashma; Altintas, Yemliha; Hettiarachchi, Chathuranga; Sum, Tze Chien; Demir, Hilmi Volkan; Dang, Cuong; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Altintas, Yemliha
    Colloidal quantum wells (CQWs) provide an appealing platform to achieve emissive many-body correlations for novel optoelectronic devices, given that they act as hosts for strong carrier Coulomb interactions and present suppressed Auger recombination. However, the demonstrated high-order excitonic emission in CQWs requires ultrafast pumping with high excitation levels and can only be spec-trally resolved at the single-particle level under cryogenic condi-tions. Here, through systematic investigation using static power -dependent emission spectroscopy and transient carrier dynamics, we show that Cu-doped CdSe CQWs exhibit continuous-wave -pumped high-order excitonic emission at room temperature with a large binding energy of X64 meV. We attribute this unique behavior to dopant excitons in which the ultralong lifetime and the highly localized wavefunction facilitate the formation of many-body corre-lations. The spectrally resolved high-order excitonic emission gener-ated at power levels compatible with solar irradiation and electrical injection might pave the way for novel solution-processed solid-state devices.
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    Electroluminescence Efficiency Enhancement in Quantum Dot Light-Emitting Diodes by Embedding a Silver Nanoisland Layer
    (WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY, 2015) Yang, Xuyong; Hernandez-Martinez, Pedro Ludwig; Dang, Cuong; Mutlugun, Evren; Zhang, Kang; Demir, Hilmi Volkan; Sun, Xiao Wei; AGÜ, Mühendislik Fakültesi, Elektrik & Elektronik Mühendisliği Bölümü;
    A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency (EQE) of 7.1% achieved in the present work is the highest efficiency value reported for green-emitting QLEDs with a similar structure, which corresponds to 46% enhancement compared with the reference device. The relevant mechanisms enabling the EQE enhancement are associated with the near-field enhancement via an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Ag nanoislands, which are found to lead to good agreement between the simulation results and the experimental data, providing us with a useful insight important for plasmonic QLEDs.
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    Highly flexible, electrically driven, top-emitting, quantum dot light-emitting stickers
    (American Chemical Society, 2014) Yang, Xuyong; Mutlugun, Evren; Dang, Cuong; Dev, Kapil; Gao, Yuan; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan; 0000-0003-3715-5594; AGÜ, Mühendislik Fakültesi, Elektrik - Elektronik Mühendisliği Bölümü; Mutlugun, Evren
    Flexible information displays are key elements in future optoelectronic devices. Quantum dot light-emitting diodes (QLEDs) with advantages in color quality, stability, and cost-effectiveness are emerging as a candidate for single-material, full color light sources. Despite the recent advances in QLED technology, making high-performance flexible QLEDs still remains a big challenge due to limited choices of proper materials and device architectures as well as poor mechanical stability. Here, we show highly efficient, large-area QLED tapes emitting in red, green, and blue (RGB) colors with top-emitting design and polyimide tapes as flexible substrates. The brightness and quantum efficiency are 20 000 cd/m2 and 4.03%, respectively, the highest values reported for flexible QLEDs. Besides the excellent electroluminescence performance, these QLED films are highly flexible and mechanically robust to use as electrically driven light-emitting stickers by placing on or removing from any curved surface, facilitating versatile LED applications. Our QLED tapes present a step toward practical quantum dot based platforms for high-performance flexible displays and solid-state lighting.
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    Low-Threshold Lasing from Copper-Doped CdSe Colloidal Quantum Wells
    (WILEY-V C H VERLAG GMBHPOSTFACH 101161, 69451 WEINHEIM, GERMANY, 2021) Yu, Junhong; Sharma, Manoj; Li, Mingjie; Delikanli, Savas; Sharma, Ashma; Taimoor, Muhammad; Altintas, Yemliha; McBride, James R.; Kusserow, Thomas; Sum, Tze-Chien; Demir, Hilmi Volkan; Dang, Cuong; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Altintas, Yemliha
    Transition metal doped colloidal nanomaterials (TMDCNMs) have recently attracted attention as promising nano-emitters due to dopant-induced properties. However, despite ample investigations on the steady-state and dynamic spectroscopy of TMDCNMs, experimental understandings of their performance in stimulated emission regimes are still elusive. Here, the optical gain properties of copper-doped CdSe colloidal quantum wells (CQWs) are systemically studied with a wide range of dopant concentration for the first time. This work demonstrates that the amplified spontaneous emission (ASE) threshold in copper-doped CQWs is a competing result between the biexciton formation, which is preferred to achieve population inversion, and the hole trapping which stymies the population inversion. An optimum amount of copper dopants enables the lowest ASE threshold of approximate to 7 mu J cm(-2), about 8-fold reduction from that in undoped CQWs (approximate to 58 mu J cm(-2)) under sub-nanosecond pulse excitation. Finally, a copper-doped CQW film embedded in a vertical cavity surface-emitting laser (VCSEL) structure yields an ultralow lasing threshold of 4.1 mu J cm(-2). Exploiting optical gain from TMDCNMs may help to further boost the performance of colloidal-based lasers.
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    Management of electroluminescence from silver-doped colloidal quantum well light-emitting diodes
    (Cell Press, 2022) Liu, Baiquan; Sharma, Manoj; Yu, Junhong; Wang, Lin; Shendre, Sushant; Sharma, Ashma; Izmir, Merve; Delikanli, Savas; Altintas, Yemliha; Dang, Cuong; Sun, Handong; Demir, Hilmi Volkan; 0000-0001-9375-7683; 0000-0001-5215-9740; 0000-0001-6183-4082; 0000-0002-2261-7103; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Altıntaş, Yemliha
    Impurity doping is a promising strategy to afford colloidal nanocrystals exhibiting novel optical, catalytic, and electronic characteristics. However, some significant properties of noble metal-doped nanocrystals (NMD-NCs) remain unknown. Here, we report the electroluminescence (EL) from NMD-NCs. By doping silver impurity into cadmium selenide colloidal quantum wells (CQWs), dual-emission emitters are achieved and a light-emitting diode (LED) with a luminance of 1,339 cd m−2 is reported. In addition, the proposed energy gap engineering to manage exciton recombination is a feasible scheme for tunable EL emissions (e.g., the dopant emission is tuned from 606 to 761 nm). Furthermore, an organic-inorganic hybrid white LED based on CQWs is realized, reaching a color rendering index of 82. Moreover, flexible CQW-LEDs are reported. The findings present a step to unveil the EL property of NMD-NCs, which can be extended to other noble metal impurities, and pave the pathway for NMD-NCs as a class of electronic materials for EL applications.