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    Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient
    (WILEY-V C H VERLAG GMBHPOSTFACH 101161, 69451 WEINHEIM, GERMANY, 2014) Fabiano, Simone; Usta, Hakan; Forchheimer, Robert; Crispin, Xavier; Facchetti, Antonio; Berggren, Magnus; 0000-0001-5154-0291; 0000-0001-7016-6514; 0000-0002-0618-1979; 0000-0002-8175-7958; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Usta, Hakan
    Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.