Browsing by Author "Al-Ghamdi, Ahmed A."

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    Article
    Frequency and electric field controllable photodevice: FYTRONIX device
    (ELSEVIERRADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS, 2017) Tataroglu, A.; Al-Sehemi, Abdullah G.; Ozdemir, Mehmet; Ozdemir, Resul; Usta, Hakan; Al-Ghamdi, Ahmed A.; Farooq, W. A.; Yakuphanoglu, F.; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Ozdemir, Mehmet; Ozdemir, Resul; Usta, Hakan
    Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage ( I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications.
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    Article
    Logarithmic organic photodetectors
    (ELSEVIER, 2015) Elgazzar, Elsayed; Ozdemir, Mehmet; Usta, Hakan; Al-Ghamdi, Ahmed A.; DERE, Ayşegül; El-Tantawy, Farid; Yakuphanoglu, F.; 0000-0001-5790-2943; 0000-0002-0618-1979; AGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü; Ozdemir, Mehmet; Usta, Hakan
    A novel photodetector of Al/GO:C8-BTBT/n-Si/Au with various graphene oxide (GO) contents has been investigated. The electrical properties of the diodes were characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The values of barrier height, ideality factor, and series resistance of the diodes were determined from I–V characteristic curves by using Norde’s equations. The photocurrent properties of the diode were studied under various illumination intensities. The photoconducting mechanism of the diodes is controlled by the traps. The photoresponse properties of the diodes are increased with GO contents. The obtained results indicate that graphene oxide doped 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene/n-Si heterojunctions can be used as a photodetector for optoelectronic applications.