Liguori, RosalbaUsta, HakanFusco, SandraFacchetti, AntonioLicciardo, Gian DomenicoDi Benedetto, LuigiRubino, Alfredo2021-08-232021-08-2320170018-93831557-9646https://doi.org/10.1109/TED.2017.2682928https://hdl.handle.net/20.500.12573/931This work was supported by the SMARTAGS Project through the Ministero dell'Universita e della Ricerca in the ambit of the National Operational Program for Research and Competitiveness 2007-2013 under Grant PON02_00556_3420580.Organic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm(2)/V . s, respectively. Surface treatments of the substrate, insulator, and metal contacts used for OTFT fabrication employing polymer films and different self-assembled monolayers were investigated. In particular, in bottom-gate devices, the insulator surface hydrophobicity was optimized by the deposition of poly(methyl methacrylate) or hexamethyldisilazane, while in the top-gate geometry, pentafluorobenzenethiol was efficiently used to modify the substrate surface energy and to change the contact work function. Atomic force microscopy analysis was exploited to understand the relationship between the semiconductor thin-film morphology and the device electrical performance. The results shown here indicate an inverse proportionality between the mobility and the interface trap density, with parameters depending especially on semiconductor-insulator interfacial properties, and a correlation between the threshold voltage and the characteristics of the semiconductor-metal interface.enginfo:eu-repo/semantics/closedAccesssurface treatmentsemiconductor-metal interfacessemiconductor-insulator interfacesorganic thin-film transistors (OTFTs)Charge carrier mobilityarticleVolume 64 Issue 5 Page 2338-2344 Special Issue SI