Ocaya, R. O.Ozdemir, MehmetOzdemir, ResulAl-Ghamdi, AhmedUsta, HakanFarooq, W. A.Yakuphanoglu, F.2021-11-242021-11-2420160379-6779https://doi.org/10.1016/j.synthmet.2016.10.001https://hdl.handle.net/20.500.12573/1031This study was supported by FIRAT University Scientific Research Projects Unit under project number: FF.15.19. The authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination. (C) 2016 Elsevier B.V. All rights reserved.enginfo:eu-repo/semantics/closedAccessOrgano-metal diodeSchottky diodePhotodiode20D-TIFDKTPolymer diodearticleVolume 221 Page 48-54