Liguori, R.Fusco, SandraRubino, AlfredoUsta, HakanFacchetti, A. F.2025-09-252025-09-25201797815090398521545-827Xhttps://doi.org/10.1109/SMICND.2017.8101182https://hdl.handle.net/20.500.12573/4030Electron Devices Chapter (EDS); et al.; IEEE; IEEE - Electron Devices Society (EDS); IEEE -Romania Section; Ministry of Research and InnovationUsta, Hakan/0000-0002-0618-1979; Liguori, Rosalba/0000-0002-0093-1169A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied. © 2018 Elsevier B.V., All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic Thin-Film Transistors (Otfts)Semiconductor-Insulator InterfacesSemiconductor-Metal InterfacesTrap-Limited Charge TransportAtomic Force MicroscopyInterfaces (Materials)Thin Film CircuitsThin FilmsTransistorsElectrical PerformanceInterface EngineeringInterface Trap DensityOrganic Thin Film Transistor (Otfts)Organic Thin Film TransistorsQuality of InterfacesSemiconductor-Insulator InterfaceSemiconductor-Metal InterfacesThin Film TransistorsConference Object10.1109/SMICND.2017.81011822-s2.0-85040526914