Durandurdu, Murat2025-09-252025-09-2520150002-78201551-2916https://doi.org/10.1111/jace.13406https://hdl.handle.net/20.500.12573/4930Durandurdu, Murat/0000-0001-5636-3183;Amorphous AlN (a-AlN) is modeled by melt-and-quench technique using ab initio molecular dynamic simulations. For the first time, three-dimensional hexagonal-like nanoclusters embedded in amorphous matrix are proposed for a-AlN. The model is chemically ordered and dominantly fourfold coordinated, but its short-range order is partially different from the crystalline morphology due to the nanoclusters. The model is semiconducting with a theoretical band gap of 1.7eV.eninfo:eu-repo/semantics/closedAccessArticle10.1111/jace.134062-s2.0-84926293678