Ocaya, R. O.Ozdemir, MehmetOzdemir, ResulAl-Ghamdi, AhmedUsta, HakanFarooq, W. A.Yakuphanoglu, F.2025-09-252025-09-2520160379-6779https://doi.org/10.1016/j.synthmet.2016.10.001https://hdl.handle.net/20.500.12573/3218Al-Ghamdi, Ahmed/0000-0002-5409-3770; Ocaya (Prof), R.O./0000-0002-5925-588X; Usta, Hakan/0000-0002-0618-1979; Ozdemir, Resul/0000-0002-7957-110X;A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2-yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination. (C) 2016 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrgano-Metal DiodeSchottky DiodePhotodiode20D-TIFDKTPolymer DiodeArticle10.1016/j.synthmet.2016.10.0012-s2.0-84992450903