Loffredo, FaustaGrimaldi, Immacolata AngelicaMiscioscia, RiccardoNenna, GiuseppeVillani, FulviaMinarini, CarlaFacchetti, Antonio2025-09-252025-09-2520151551-319X1558-9323https://doi.org/10.1109/JDT.2014.2363685https://hdl.handle.net/20.500.12573/4419Nenna, Giuseppe/0000-0002-2119-0283; Grimaldi, Immacolataangelica/0000-0001-9716-2206; Villani, Fulvia/0000-0001-7301-9819; Usta, Hakan/0000-0002-0618-1979In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.eninfo:eu-repo/semantics/closedAccessPhotocurable Gate DielectricPMMA CopolymerPentacenePhotoresponsePhototransistorArticle10.1109/JDT.2014.23636852-s2.0-84929322265