Durandurdu, Murat2025-09-252025-09-2520161478-64351478-6443https://doi.org/10.1080/14786435.2016.1232495https://hdl.handle.net/20.500.12573/4256Durandurdu, Murat/0000-0001-5636-3183We use ab initio molecular dynamics simulations to create an amorphous AlBN2 model and find that it consists of nanosegregated two-dimensional hexagonal BN-like and tetrahedral AlN-like domains. These domains are somewhat homogenously distributed in the network. There exist no chemical disorder and Al-B bonding. Amorphous AlBN2 is a semiconductor having a theoretical band gap energy of approximate to 2.24eV, larger than that of amorphous AlN and BN systems. This amorphous nitride might find some applications as an electronic material.eninfo:eu-repo/semantics/closedAccessNitrideAmorphous SemiconductorsNanoscaleArticle10.1080/14786435.2016.12324952-s2.0-84987660661