Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Fabiano, SimoneUsta, HakanForchheimer, RobertCrispin, XavierFacchetti, AntonioBerggren, Magnus2022-10-102022-10-1020140935-96481521-4095https://doi.org/10.1002/adma.201403070https://hdl.handle.net/20.500.12573/1380Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.enginfo:eu-repo/semantics/openAccessSelective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambientarticle264474387443