Soheyli, EhsanBicer, AysenurOzel, Sultan SuleymanTiras, Kevser SahinMutlugun, EvrenSahin Tiras, Kevser2025-09-252025-09-2520232470-1343https://doi.org/10.1021/acsomega.3c05580https://hdl.handle.net/20.500.12573/4914Mutlugun, Evren/0000-0003-3715-5594; Bicer, Aysenur/0000-0001-5523-4769; Soheyli, Ehsan/0000-0002-1403-7934;While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris-(dimethyl-amino)-phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626-670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50-70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m(-2), and a current efficiency of 0.88 cd A(-1).eninfo:eu-repo/semantics/openAccessTuning the Shades of Red Emission in InP/ZnSe Nanocrystals With Narrow Full Width for Fabrication of Light-Emitting DiodesArticle10.1021/acsomega.3c055802-s2.0-85176725415