Loffredo, FaustaGRIMALDI, IMMACOLATAANGELICAMiscioscia, RiccardoNenna, GiuseppeVillani, FulviaMinarini, CarlaPetrosino, MarioRubino, AlfredoUsta, HakanFacchetti, Antonio2023-08-022023-08-0220151558-93231551-319XWOS:000376179800007https://doi.org/10.1109/JDT.2014.2363685https://hdl.handle.net/20.500.12573/1675In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.enginfo:eu-repo/semantics/closedAccessPhotocurable gate dielectricPMMA copolymerpentacenephotoresponsephototransistorarticle116533540